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BES02N6

Inductive Sensors

BESM08EH1-PSC20B-S04G-S01 Basicfeatures AdditionalfeaturesHousingresistanttoweldspatter Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2

BalluffBalluff Korea Ltd.

巴魯夫巴魯夫集團

CEB02N6

N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB02N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB02N6A

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N6

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●600V,1.9A,RDS(ON)=5?@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,1.3A,RDS(ON)=8?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
BALLUFF
24+
con
2000
優(yōu)勢庫存,原裝正品
 詢價
24+
N/A
80000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
BORN
22+
DFN2×2-3L
25000
伯恩全系列在售
 詢價
BORN
22+
DFN2×2-3L
20000
原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
SXSEMI
24+
DFN2020
900000
原裝進口特價
 詢價
APPLIED MATERIALS (AMAT)
NDC
80
公司優(yōu)勢庫存 熱賣中!
 詢價
24+
36000
詢價
CHINAXYJ
23+
1608
9868
專做原裝正品,假一罰百!
 詢價
進口品牌
24+
SMD
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
 詢價
BES
18+
QFN
97
向鴻原裝正品/代理渠道/現(xiàn)貨優(yōu)勢
 詢價
更多BES02N6供應商 更新時間2025-2-14 13:58:00

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