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BFG310

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability Applications ?IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability Applications ?IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFU310

N-channelsiliconfield-effecttransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BGA310

SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz)

SiliconBipolarMMIC-Amplifier Preliminarydata ?Cascadable50?-gainblock ?9dBtypicalgainat1.0GHz ?9dBmtypicalP-1dBat1.0GHz ?3dB-bandwidth:DCto2.4GHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BPS310

BPS310Series-12mmUncompensatedLowPressureSensor

BournsBourns Electronic Solutions

伯恩斯

BR310

SINGLE-PHASESILICONBRIDGERECTIFIER

RECTRON

Rectron Semiconductor

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

BYTES

Bytes

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

BR310

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-3.0Amperes FEATURES *Surgeoverloarating:50Amperespeak *Lowforwardvoltagedrop *Smallsize:simpleinstallation

DCCOM

Dc Components

BR310

SINGLE-PHASESILICONBRIDGE

Features ●Surgeoverloadrating-50amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Tinnedcopperleads ●MountingPosition:Any ●Mounting:Thruholdfor#6screw

Good-Ark

GOOD-ARK Electronics

BR310

3.0ABRIDGERECTIFIERS

3.0ABRIDGERECTIFIERS

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

UNIOHMUniohm

臺灣厚聲

BR310

SILICONBRIDGERECTIFIERS

VOLTAGERANGE:50---1000V CURRENT:3.0A FEATURES Ratingto1000VPRV Surgeoverloadratingto50Amperespeak Idealforprintedcircuitboard Reliablelowcostconstructionutilizingmoldedplastictechniqueresultsininexpensiveproduct LeadsolderableperMIL-STD-202

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

詳細(xì)參數(shù)

  • 型號:

    BF-310BPA/KOEM

  • 功能描述:

    FLASHLIGHT HEAVY DUTY W/2AA CELL

  • RoHS:

  • 類別:

    工具 >> 閃光燈

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    1

  • 類型:

    筆形手電筒

  • 燈類型:

    LED

  • 燈輸出:

    -

  • 特點(diǎn):

    可變強(qiáng)度

  • 電池大小:

    AA(需要 1 個(gè))

  • 長度:

    -

  • 主體材料:

    -

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更多BF-310BPA/KOEM供應(yīng)商 更新時(shí)間2024-12-25 11:10:00