DESCRIPTION

Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES

? Specially designed for use at 5 V supply voltage

? Short channel transistor with high transfer admittance to

input capacitance ratio

? Low noise gain controlled amplifier up to 1 GHz

? Superior cross-modulation performance during AGC.

APPLICATIONS

? VHF and UHF applications with 3 to 7 V supply voltage

such as television tuners and professional

communications equipment.

BF904R屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻。恩智浦半導(dǎo)體公司制造生產(chǎn)的BF904R晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。