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BF909

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF909

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909A

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909AR

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909AWR

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909R

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF909R

N-channel dual gate MOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909R

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909WR

N-channel dual-gate MOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Speciallyde

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF909WR

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909_15

N-channel dual gate MOS-FETs

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BF909_2015

N-channel dual gate MOS-FETs

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BF909WR_15

N-channel dual-gate MOS-FET

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BF909WR_2015

N-channel dual-gate MOS-FET

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BF909,235

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-253-4,TO-253AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:MOSFET N-CH 7V 40MA SOT143

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

BF909A,215

包裝:卷帶(TR) 封裝/外殼:TO-253-4,TO-253AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:MOSFET N-CH SOT-143B

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

BF909AR,215

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:SOT-143R 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:MOSFET N-CH SOT-143R

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    BF909

  • 制造商:

    PHILIPS

  • 制造商全稱:

    NXP Semiconductors

  • 功能描述:

    N-channel dual gate MOS-FETs

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NXP/恩智浦
21+
SOT-143
600000
航宇科工半導(dǎo)體-中國(guó)航天科工集團(tuán)戰(zhàn)略合作伙伴!
詢價(jià)
NXP(恩智浦)
23+
標(biāo)準(zhǔn)封裝
14548
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
詢價(jià)
NEXP
24+
SOT-143
45000
熱賣優(yōu)勢(shì)現(xiàn)貨
詢價(jià)
NXP
16+
SOT-143
18000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)
NXP/恩智浦
2019+
SOT143
36000
原盒原包裝 可BOM配套
詢價(jià)
NXP(恩智浦)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
NEXP
2013+PB
SOT-143
6000
原裝正品 可含稅交易
詢價(jià)
NXP/恩智浦
24+
SOT143
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
詢價(jià)
PH
23+
SOT-23
51000
全新原裝深圳現(xiàn)貨庫(kù)存,特價(jià)·
詢價(jià)
PHI
23+
SOT143
12300
詢價(jià)
更多BF909供應(yīng)商 更新時(shí)間2024-12-22 13:01:00