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BFE505

NPNwidebanddifferentialtransistor

DESCRIPTION EmittercoupleddualNPNsiliconRFtransistorinasurfacemount,5-pinSOT353(S-mini)package.ThetransistorisprimarilyintendedforapplicationsintheRFfrontendasabalancedmixer,adifferentialamplifierinanaloganddigitalcellularphones,andincordlessphones,page

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG505

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG505

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG505

NPN9GHzwidebandtransistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BFG505/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG505/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG505/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG505/X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG505W

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG505W

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG505W/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG505W-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG505W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG505-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFM505

DualNPNwidebandtransistor

DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount,6-pinSOT363(S-mini)package.ThetransistorsareprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellularphones,cordlessphones,radardetectors,pagersandsat

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFM505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFR505

NPN9GHzwidebandtransistor

DESCRIPTION TheBFR505isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFR505T

NPN9GHzwidebandtransistor

DESCRIPTION NPNtransistorinaplasticSOT416(SC-75)package. FEATURES ?Lowcurrentconsumption ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability ?SOT416(SC-75)package. APPLICATIONS Lowpoweramplifiers,oscillat

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號:

    BFC505,115

  • 制造商:

    NXP Semiconductors

供應(yīng)商型號品牌批號封裝庫存備注價格
PHA
23+
3082
詢價
Freescale
23+
原廠封裝
5177
現(xiàn)貨
詢價
BRIGHT
24+
LED
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
詢價
AIMTRON
23+
SOT23-6
24500
原裝正品,假一罰十
詢價
NXP
23+
SC70-5
7500
全新原裝優(yōu)勢
詢價
NXP
22+23+
SC70-5
77126
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
NXP
23+
SC70-5
999999
原裝正品現(xiàn)貨量大可訂貨
詢價
NXP
19+
SC70-5
20000
10420
詢價
NXP
23+
SC70-5
20000
原廠原裝正品現(xiàn)貨
詢價
NXP
2020+
SC70-5
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
更多BFC505,115供應(yīng)商 更新時間2024-10-31 15:20:00