首頁 >BFG520W/X>規(guī)格書列表

零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

BFG520W/X

NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520W/X

NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520W/X,115

包裝:卷帶(TR) 封裝/外殼:SOT-343 反向插針 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻 描述:RF TRANS NPN 15V 9GHZ 4SO

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

BFG520W-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520X

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFG520-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFM520

DualNPNwidebandtransistor

DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount6-pinSOT363(S-mini)package.Thetransistoris primarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellular phones,cordlessphones,radardetectors,pagersan

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFM520

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFP520

NPNSiliconRFTransistor(Forhighestgainlownoiseamplifierat1.8GHzand2mA/2V)

NPNSiliconRFTransistor Preliminarydata ?Forhighestgainlownoiseamplifierat1.8GHzand2mA/2V OutstandingGa=20dB NoiseFigureF=0.95dB ?Foroscillatorsupto15GHz ?TransitionfrequencyfT=45GHz ?Goldmetalizationforhighreliability ?SIEGET?45-Line

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFP520

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Lownoiseamplifierdesignedforlowvoltageapplications,idealfor1.2Vor1.8Vsupplyvoltage ?Commone.g.incordlessphones,satellitereceiversandoscillatorsupto22GHz ?Highgainandlownoiseathighfrequenciesduetohightransitfrequ

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP520

TRANZYSTORYNPN

[UNITRACEMI] TRANZYSTORYNPN

ETCList of Unclassifed Manufacturers

未分類制造商

BFP520

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP520

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP520F

NPNSiliconRFTransistor

Productdescription TheBFP520Fisalownoisedevicebasedonagroundedemitter(SIEGET?)thatispartofInfineon’sestablishedfifthgenerationRFbipolartransistorfamily.ItstransitionfrequencyfTof45GHz,highgainandlownoisemakethedevicesuitableforapplicationsupto15GHz.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP520F

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP520F

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR520

NPN9GHzwidebandtransistor

DESCRIPTION TheBFR520isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtune

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR520

iscSiliconNPNRFTransistor

DESCRIPTION ·HighPowerGain ·HighCurrentGainBandwidthProduct ·LowNoiseFigure APPLICATIONS ·DesignedforRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordless.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFR520

SiliconNPNRFTransistor

DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforRFfrontendinwidebandapplicationsintheGHzrange.suchasanaloganddigitalcellulartelephones,cordless.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    BFG520W/X

  • 功能描述:

    射頻雙極小信號(hào)晶體管 NPN 70MA 15V 9GHZ

  • RoHS:

  • 制造商:

    NXP Semiconductors

  • 配置:

    Single

  • 晶體管極性:

    NPN

  • 最大工作頻率:

    7000 MHz 集電極—發(fā)射極最大電壓

  • VCEO:

    15 V 發(fā)射極 - 基極電壓

  • VEBO:

    2 V

  • 集電極連續(xù)電流:

    0.15 A

  • 功率耗散:

    1000 mW 直流集電極/Base Gain hfe

  • 最大工作溫度:

    + 150 C

  • 封裝/箱體:

    SOT-223

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NXP(恩智浦)
23+
標(biāo)準(zhǔn)封裝
7098
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
詢價(jià)
NXP
24+
SOT-343
23500
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購!
詢價(jià)
NXP/恩智浦
24+
SOT343
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
詢價(jià)
NXP
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
PHL
16+
SOT-343
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)
NXPSemiconductors
24+
SOT-343
115
詢價(jià)
PHL
17+
SOT-343
6200
100%原裝正品現(xiàn)貨
詢價(jià)
NXP
2017+
SOT343
6528
只做原裝正品!假一賠十!
詢價(jià)
PHILIPS
23+
SOT-343
6680
全新原裝優(yōu)勢(shì)
詢價(jià)
NXPSEMICO
23+
NA
29486
專做原裝正品,假一罰百!
詢價(jià)
更多BFG520W/X供應(yīng)商 更新時(shí)間2025-1-10 23:00:00