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BFR520T

NPN9GHzwidebandtransistor

DESCRIPTION NPNtransistorinaplasticSOT416(SC75)envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransit

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR520T

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFS520

NPN9GHzwidebandtransistor

DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfre

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFS520

iscSiliconNPNRFTransistor

DESCRIPTION ·LowNoiseFigure NF=1.1dBTYP.@VCE=6V,IC=5mA,f=900MHz ·HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=6V,IC=20mA,f=1GHz APPLICATIONS ·DesignedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessp

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFS520

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFS520

NPNTransistor

FEATURES ?CollectorCurrentCapabilityIC=70mA ?CollectorEmitterVoltageVCEO=15V ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency MECHANICALDATA ?Case:SOT-323(SC-70-3)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

BFS520

NPNSiliconRFTransistor

Description Ultrahighfrequencylownoisetransistor,planarNPNsiliconEpitaxialbipolarprocess.Withhighpowergain,lownoisefigure,largedynamicrangeandidealcurrentcharacteristics,theuseofSOT-323ultracompactchippackage,mainlyusedintheVHF,UHFandCATVhighfrequencyw

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

BFU520

NPNwidebandsiliconRFtransistor

Generaldescription NPNsiliconRFtransistorforhighspeed,lownoiseapplicationsinaplastic,4-pin dual-emitterSOT143Bpackage. TheBFU520ispartoftheBFU5familyoftransistors,suitableforsmallsignaltomedium powerapplicationsupto2GHz. Featuresandbenefits ?Lownoise

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFU520

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=10V(Min.) ·ComplementtoTypeBFU520 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFU520

NPNWidebandSiliconRFTransistor

DESCRIPTION ·LowNoiseandHighGain NF=1.8dBTYP @VCE=10V,IC=10mA,f=0.9GHz ·HighPowerGain MAG=9dBTYP. @VCE=8V,IC=40mA,f=1.0GHz ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·ApplicationsRequiringHighSu

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BFP520F

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    NPN Silicon RF Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
16048
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開(kāi)票。
 詢價(jià)
INFINEON/英飛凌
24+
NA
17867
原裝進(jìn)口假一罰十
 詢價(jià)
Infineon/英飛凌
24+
TSFP-4
163000
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
INFINEON
23+
TSFP-4
10000
原裝正品,假一罰十
 詢價(jià)
INFINEON
24+
TSFP-4
24200
新進(jìn)庫(kù)存/原裝
 詢價(jià)
INFINEON
23+
SOT0603-4
7500
全新原裝優(yōu)勢(shì)
 詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INFINEON
23+
SOT-143
63000
原裝正品現(xiàn)貨
 詢價(jià)
INFINEON
6000
面議
19
SOT0603-4
 詢價(jià)
infineon
19+
SOT0603-4
20000
36000
 詢價(jià)
更多BFP520F供應(yīng)商 更新時(shí)間2025-4-26 22:59:00

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