首頁 >BFR182R>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

BFR182T

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR182T

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ???Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR182T

SiliconNPNPlanarRFTransistor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR182TF

SiliconNPNPlanarRFTransistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR182TW

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ???Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR182TW

SiliconNPNPlanarRFTransistor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR182TW

iscSiliconNPNRFTransistor

DESCRIPTION ·Forlownoiseandhighgainbroadbandamplifiers atcollectorcurrentsfrom1mAto20mA. ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Lownoisefigure ·Highpowergain

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFR182W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR182W

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHzF=1.2dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR182W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR182W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.4dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFY182

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH182

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

BLF182XR

PowerLDMOStransistor

Generaldescription A250WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegrateddoublesidedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstabilit

AmpleonAmpleon USA Inc.

安譜隆

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON
24+
SOT-143SOT-23-4
9200
新進(jìn)庫存/原裝
詢價(jià)
INFINEON
23+
SOT143
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
SOT143
7000
詢價(jià)
INFINEON
16+
SOT-523
69000
原裝現(xiàn)貨假一罰十
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
Infineon/英飛凌
1937+
SC75
9852
只做進(jìn)口原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
INFINEON
22+
SOT-523
10000
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng)
詢價(jià)
VISHAY
2023+
SOT-23
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
NXP/恩智浦
20+
SOT-523
120000
只做原裝 可免費(fèi)提供樣品
詢價(jià)
SIE
23+
SMD
5177
現(xiàn)貨
詢價(jià)
更多BFR182R供應(yīng)商 更新時(shí)間2025-1-6 16:30:00