零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ???Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ???Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscSiliconNPNRFTransistor DESCRIPTION ·Forlownoiseandhighgainbroadbandamplifiers atcollectorcurrentsfrom1mAto20mA. ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Lownoisefigure ·Highpowergain | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA) NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHzF=1.2dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor) Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.4dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006 | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL | ADAM-TECHAdam Technologies, Inc. 亞當(dāng)科技亞當(dāng)科技股份有限公司 | ADAM-TECH | ||
PowerLDMOStransistor Generaldescription A250WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegrateddoublesidedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstabilit | AmpleonAmpleon USA Inc. 安譜隆 | Ampleon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON |
24+ |
SOT-143SOT-23-4 |
9200 |
新進(jìn)庫存/原裝 |
詢價(jià) | ||
INFINEON |
23+ |
SOT143 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
SOT143 |
7000 |
詢價(jià) | |||
INFINEON |
16+ |
SOT-523 |
69000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
Infineon/英飛凌 |
1937+ |
SC75 |
9852 |
只做進(jìn)口原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
INFINEON |
22+ |
SOT-523 |
10000 |
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
VISHAY |
2023+ |
SOT-23 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
NXP/恩智浦 |
20+ |
SOT-523 |
120000 |
只做原裝 可免費(fèi)提供樣品 |
詢價(jià) | ||
SIE |
23+ |
SMD |
5177 |
現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書
更多- BFR193
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