首頁 >BFR182T/RG>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconNPNPlanarRFTransistor Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ???Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscSiliconNPNRFTransistor DESCRIPTION ·Forlownoiseandhighgainbroadbandamplifiers atcollectorcurrentsfrom1mAto20mA. ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Lownoisefigure ·Highpowergain | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA) NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHzF=1.2dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor) Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.4dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006 | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL | ADAM-TECHAdam Technologies, Inc. 亞當科技亞當科技股份有限公司 | ADAM-TECH | ||
PowerLDMOStransistor Generaldescription A250WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegrateddoublesidedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstabilit | AmpleonAmpleon USA Inc. 安譜隆 | Ampleon | ||
PowerLDMOStransistor Generaldescription A250WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegrateddoublesidedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstabilit | AmpleonAmpleon USA Inc. 安譜隆 | Ampleon | ||
GuardsagainstaccidentaldisconnectionofComputers,PDU’s,ServersandmostNetworkDevices. | BURLAND Burland Technology Solutions | BURLAND | ||
CoilsandChokesforgeneraluse | PREMOPREMO CORPORATION S.L 普萊默 | PREMO |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PHILIPS/飛利浦 |
23+ |
SOT-23 |
20000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
INFINEON |
24+ |
SMD |
168200 |
新進庫存/原裝 |
詢價 | ||
INFINEON |
23+ |
SC75 |
7936 |
詢價 | |||
Infineon/英飛凌 |
22+ |
SOT-523 |
164771 |
原裝正品現(xiàn)貨,可開13個點稅 |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
INFINEON/英飛凌 |
23+ |
SOT-523 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
INFINEON/英飛凌 |
2022 |
SOT-523 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 | ||
Infineon/英飛凌 |
23+ |
20000 |
全新、原裝、現(xiàn)貨 |
詢價 | |||
Infineon Technologies |
2022+ |
PG-SC-75 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
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