零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BFY18 | Small Signal Transistors | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0.2to2.5mA ?Hermeticallysealedmicrowavepackage ?fT=6.5GHz,F=2.6dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006 | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.2dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006 | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.4dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006 | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
射頻/高頻放大 (HF)_開關(guān)管 (S)
- 封裝形式:
直插封裝
- 極限工作電壓:
40V
- 最大電流允許值:
0.1A
- 最大工作頻率:
145MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
BC107,BC171,BC183,BC237,BSW41,BSY63,2N2221,2N2222,3DG120C,
- 最大耗散功率:
0.3W
- 放大倍數(shù):
- 圖片代號(hào):
D-8
- vtest:
40
- htest:
145000000
- atest:
0.1
- wtest:
0.3
詳細(xì)參數(shù)
- 型號(hào):
BFY18
- 制造商:
CENTRAL
- 制造商全稱:
Central Semiconductor Corp
- 功能描述:
Small Signal Transistors
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MOT |
24+ |
CAN3 |
450000 |
詢價(jià) | |||
MOT/ST/PH |
2339+ |
CAN3 |
13523 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
MOT/PHI |
16+ |
CAN3 |
19500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
MOT/PHI |
專業(yè)鐵帽 |
CAN3 |
19500 |
原裝鐵帽專營(yíng),代理渠道量大可訂貨 |
詢價(jià) | ||
MOT/PHI |
專業(yè)鐵帽 |
CAN3 |
67500 |
鐵帽原裝主營(yíng)-可開原型號(hào)增稅票 |
詢價(jià) | ||
24+ |
CAN |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢 |
詢價(jià) | |||
CENTRAL |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INFINEON |
22+ |
CG-UX-4 |
8000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
INFINEON |
23+ |
-- |
14253 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價(jià) | ||
INFINEON |
23+ |
CG-UX-4 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) |