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BFY18

Small Signal Transistors

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BFY180

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0.2to2.5mA ?Hermeticallysealedmicrowavepackage ?fT=6.5GHz,F=2.6dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFY180

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180ES

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180H

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180P

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180S

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.2dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFY181

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181ES

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181H

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181P

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181S

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.4dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFY182

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182ES

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182H

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182P

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182S

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

晶體管資料

  • 型號(hào):

    BFY18

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    射頻/高頻放大 (HF)_開關(guān)管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    40V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    145MHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BC107,BC171,BC183,BC237,BSW41,BSY63,2N2221,2N2222,3DG120C,

  • 最大耗散功率:

    0.3W

  • 放大倍數(shù):

  • 圖片代號(hào):

    D-8

  • vtest:

    40

  • htest:

    145000000

  • atest:

    0.1

  • wtest:

    0.3

詳細(xì)參數(shù)

  • 型號(hào):

    BFY18

  • 制造商:

    CENTRAL

  • 制造商全稱:

    Central Semiconductor Corp

  • 功能描述:

    Small Signal Transistors

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MOT
24+
CAN3
450000
詢價(jià)
MOT/ST/PH
2339+
CAN3
13523
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
MOT/PHI
16+
CAN3
19500
原裝現(xiàn)貨假一罰十
詢價(jià)
MOT/PHI
專業(yè)鐵帽
CAN3
19500
原裝鐵帽專營(yíng),代理渠道量大可訂貨
詢價(jià)
MOT/PHI
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營(yíng)-可開原型號(hào)增稅票
詢價(jià)
24+
CAN
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢
詢價(jià)
CENTRAL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
INFINEON
22+
CG-UX-4
8000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
INFINEON
23+
--
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
詢價(jià)
INFINEON
23+
CG-UX-4
8000
只做原裝現(xiàn)貨
詢價(jià)
更多BFY18供應(yīng)商 更新時(shí)間2024-12-29 14:30:00