零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
BGA7350 | RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | |
Package:32-VFQFN 裸露焊盤;包裝:卷帶(TR) 類別:RF/IF,射頻/中頻和 RFID 射頻放大器 描述:IC AMP GP 50MHZ-250MHZ 32HVQFN | NXP USA Inc. NXP USA Inc. | NXP USA Inc. | ||
Package:32-VFQFN 裸露焊盤;包裝:卷帶(TR) 類別:RF/IF,射頻/中頻和 RFID 射頻放大器 描述:IC AMP GP 50MHZ-250MHZ 32HVQFN | NXP USA Inc. NXP USA Inc. | NXP USA Inc. | ||
??????雍?????IC | BOWIN BOWIN ELECTRONIC CO. | BOWIN | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■100V,2.6A,RDS(ON)=190mΩ@VGS=10V. ■-100V,-2.0A,RDS(ON)=320mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=10V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor FEATURES ■100V,2.6A,RDS(ON)=190mΩ@VGS=5V. RDS(ON)=180mΩ@VGS=10V. ■-100V,-2.0A,RDS(ON)=320mW@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Lead-freeplati | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelandP-ChannelMOSFETuseadvancedtrenchTechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=5V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. RDS(ON)=180mW@VGS=10V. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
TheLittelfuseCG7seriesGDTisaminiaturesurfacemountdevicewitha1kA8/20關(guān)Ssurgerating | Littelfuselittelfuse 力特力特公司 | Littelfuse |
詳細(xì)參數(shù)
- 型號(hào):
BGA7350
- 功能描述:
射頻放大器 250MHz 30dB 5V 240mA
- RoHS:
否
- 制造商:
Skyworks Solutions, Inc.
- 類型:
Low Noise Amplifier
- 工作頻率:
2.3 GHz to 2.8 GHz
- P1dB:
18.5 dBm
- 輸出截獲點(diǎn):
37.5 dBm
- 功率增益類型:
32 dB
- 噪聲系數(shù):
0.85 dB
- 工作電源電壓:
5 V
- 電源電流:
125 mA
- 測試頻率:
2.6 GHz
- 最大工作溫度:
+ 85 C
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
QFN-16
- 封裝:
Reel
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NXP/恩智浦 |
23+ |
QFN32 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NXP/恩智浦 |
2022 |
QFN32 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
NXP(恩智浦) |
21+ |
6000 |
只做原裝正品,賣元器件不賺錢交個(gè)朋友 |
詢價(jià) | |||
NXP |
22+ |
QFN |
660 |
原包標(biāo)簽.100%進(jìn)口原裝.常備現(xiàn)貨! |
詢價(jià) | ||
NXP/恩智浦 |
23+ |
NA/ |
4348 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
NXP |
20+ |
32-VFQFN |
1128 |
無線通信IC,大量現(xiàn)貨! |
詢價(jià) | ||
NXP |
22+ |
SOP |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
NXP |
20+ |
QFN-32 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
NXP |
22+ |
32HVQFN |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) |
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