Description

The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT oers low

insertion loss even at high frequencies of up to 7.125 GHz, low harmonic generation along with high isolation between RF ports.

In addition, the fast switching speed enables 5G-SRS applications.

The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V to 3.6V.

The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking

capacitors at the RF Ports are only required if DC voltage is applied externally. The device has a very small size of only 1.1mm x

1.5mm and a thickness of 0.60mm.

Features

 High linearity up to 39 dBm peak power

 Low current consumption

 Low insertion loss and high port to port isolation up to 7.125 GHz

 Fast switching speed to enable 5G-SRS applications

 General Purpose Input-Output (GPIO) Interface

 No decoupling capacitors required for typical applications

 Ultra low profile lead-less plastic package (MSL-1, 260 C per IPC/JEDEC

J-STD-20)

 RoHS and WEEE compliant package

Small form factor 1.1mm x 1.5mm

BGSX22G6U10E6327XTSA1屬于RF/IF，射頻/中頻和 RFID > 射頻開關(guān)。英飛凌科技股份公司制造生產(chǎn)的BGSX22G6U10E6327XTSA1射頻開關(guān)射頻開關(guān)產(chǎn)品是用于在多個(gè)可用信號(hào)路徑之間路由 RF、IF 或微波信號(hào)的器件。示例應(yīng)用包括多天線（分集）接收器中的天線選擇、多模式系統(tǒng)中發(fā)射-接收路徑的選擇，或在發(fā)射和接收信號(hào)鏈之間切換天線。