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BSA118B

BASESTATIONANTENNAS

pulse

Pulse A Technitrol Company

BTS118D

SmartLowsidePowerSwitch

GeneralDescription NchannelverticalpowerFETinSmartSIPMOS?technology.Fullyprotectedbyembeddedprotectionfunctions. Features ?LogicLevelInput ?InputProtection(ESD) ?Thermalshutdownwithautorestart ?Greenproduct(RoHScompliant) ?Overloadprotection

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BTS118D

SmartLowSidePowerSwitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BU118

iscSiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea VCE:200V ICM:7A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneral-purposeswitchingandamplifier applications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesig

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

BUL118D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesig

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

BUL118D

iscSiliconNPNPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.5V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BULD118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

BULK118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedevicesaremanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. TheyuseaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedevicesare

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

BULT118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

BULT118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

BULT118

Highvoltagefast-switchingNPNpowertransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

BULT118D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

BYV118

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dual,commoncathodeschottkyrectifierdiodesinaconventionalleadedplasticpackageandasurfacemountingplasticpackage.Intendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV118seriesissuppliedintheSOT78co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BYV118B

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dual,commoncathodeschottkyrectifierdiodesinaconventionalleadedplasticpackageandasurfacemountingplasticpackage.Intendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV118seriesissuppliedintheSOT78co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BYV118F

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dual,commoncathodeschottkyrectifierdiodesinaplasticenvelopewithelectricallyisolatedmountingtab.Intendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV118FseriesissuppliedintheSOT186package. TheBY

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BYV118X

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dual,commoncathodeschottkyrectifierdiodesinaplasticenvelopewithelectricallyisolatedmountingtab.Intendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV118FseriesissuppliedintheSOT186package. TheBY

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CAR-118DA

MotorcycleRelay

SANYOUSanyou Corporation Limited

三友三友股份有限公司

CAR-118DM

MotorcycleRelay

SANYOUSanyou Corporation Limited

三友三友股份有限公司

CFP-AI-118

AnalogInputModuleforCompactFieldPoint

NI

National Instruments Inc.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IMT
24+
SMD
8600
新進(jìn)庫(kù)存/原裝
 詢價(jià)
IMT
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ASKEY
24+
SMD
2600
原裝現(xiàn)貨假一賠十
 詢價(jià)
IMT
SMD
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
ASKEY
22+
SMD
50000
只做原裝假一罰十,歡迎咨詢
 詢價(jià)
IMT
23+
NA/
230
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
IMT
2023+
1812-2.45
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
原裝IMT
23+
1812-2.45
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
原裝IMT
23+
1812-2.45
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
BELLING/上海貝嶺
1年內(nèi)
TO220 TO252
150000
貝嶺經(jīng)銷商 原廠FAE技術(shù)支持
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更多BL118BC供應(yīng)商 更新時(shí)間2024-10-25 16:30:00

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