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14N25

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

14N25

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MDD14N25C

N-ChannelMOSFET250V,10.2A,0.28(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Featu

MGCHIP

MagnaChip Semiconductor.

MDD14N25C

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDD14N25CRH

N-ChannelMOSFET250V,10.2A,0.28(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Featu

MGCHIP

MagnaChip Semiconductor.

MDP14N25C

N-ChannelMOSFET250V,14A,0.28(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP14N25CTH

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP14N25CTH

N-ChannelMOSFET250V,14A,0.28(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP14N25CTP

N-ChannelMOSFET250V,14A,0.28(ohm)

MGCHIP

MagnaChip Semiconductor.

SSFP14N25

StarMOSTPowerMOSFET

Description StarMOSisanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimisestheJFETeffect,increasespackingdensityandreducestheon-resistance.StarMOSalsoachievesfasterswitchingspeedsthroughoptimisedgatelayout withplanarst

Good-Ark

GOOD-ARK Electronics

SVF14N25CD

14A,250VN-CHANNELMOSFET

GENERALDESCRIPTION SVF14N25CDisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryF-CellTM high-voltageplanarVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,pro

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF14N25CDTR

14A,250VN-CHANNELMOSFET

GENERALDESCRIPTION SVF14N25CDisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryF-CellTM high-voltageplanarVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,pro

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

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23+
TO-252
360000
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19960
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1742+
SOP16
98215
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20+
SOP16
32970
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8000
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2470
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50000
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BL
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50000
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68900
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更多BL14N25D供應(yīng)商 更新時間2025-1-18 8:30:00