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HV9110PJ

High-VoltageCurrent-ModePWMController

GeneralDescription TheSupertexHV9110throughHV9113areaseriesofBiCMOS/DMOSsingle-output,pulsewidthmodulatorICsintendedforuseinhigh-speedhigh-efficiencyswitchmodepowersupplies.Theyprovideallthefunctionsnecessarytoimplementasingle-switchcurrent-modePWM,inanyto

SUTEX

Supertex, Inc

HV9110X

High-VoltageCurrent-ModePWMController

GeneralDescription TheSupertexHV9110throughHV9113areaseriesofBiCMOS/DMOSsingle-output,pulsewidthmodulatorICsintendedforuseinhigh-speedhigh-efficiencyswitchmodepowersupplies.Theyprovideallthefunctionsnecessarytoimplementasingle-switchcurrent-modePWM,inanyto

SUTEX

Supertex, Inc

IRFD9110

1-WATTRATEDPOWERMOSFETs

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

-0.6Aand-0.7A,-80Vand-100V,1.2and1.6Ohm,P-ChannelPowerMOSFETs

Description TheseareP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Features ?-0.6Aand-07A,-80Vand-100V ?rDS(ON)=

HARRIS

Harris Corporation

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-0.70A)

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?175°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
BELLING
2020+
SOT252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
BELING/上海貝嶺
2447
SOT252
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
BL
23+
TO252
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
BL
23+
TO252
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
上海貝嶺
23+
SOT-223
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢(xún)價(jià)
BEILING
21+
SOT223-3
22
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
BEILING
/
SOT223-3
22
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
BEILING
2024+
SOT223-3
500000
誠(chéng)信服務(wù),絕對(duì)原裝原盤(pán)
 詢(xún)價(jià)
BEILING
20+
SOT223-3
22
進(jìn)口原裝現(xiàn)貨,假一賠十
 詢(xún)價(jià)
BELLING/上海貝嶺
23+
SOT223
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
更多BL9110-ADJBPGB供應(yīng)商 更新時(shí)間2025-3-13 22:30:00

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