BLA6G1011-200R分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Features and benefits

■ Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply

voltage of 28 V and an IDq of 100 mA:

◆ Output power = 200 W

◆ Power gain = 20 dB

◆ Efficiency = 65

■ Easy power control

■ Integrated ESD protection

■ Enhanced ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1030 MHz to 1090 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.