BLF1049中文資料飛利浦數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

125 W LDMOS power transistor for base station

applications at frequencies from 800 MHz to 1000 MHz.

FEATURES

? Typical performance at a supply voltage of 27 V:

– 1-tone CW; IDQ = 1000 mA

– Output power = 125 W

– Gain = 16.5 dB

– Efficiency = 54

– EDGE output power = 45 W (AV)

– ACPR400 = ?64 dBc at 400 kHz

(EDGE; IDQ = 750 mA)

– EVM = 2 rms (AV)

(EDGE; IDQ = 750 mA)

? Easy power control

? Excellent ruggedness

? High power gain

? Excellent thermal stability

? Designed for broadband operation (800 to 1000 MHz)

? Internally matched for ease of use.

APPLICATIONS

? RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range.