BLF642分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

BLF642屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLF642晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

ruggedness and broadband performance of this device makes it ideal for digital

applications.

Features and benefits

? CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent

drain current IDq = 0.2 A :

? Average output power = 35 W

? Power gain = 19 dB

? Drain efficiency = 63

? 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent

drain current IDq = 0.2 A :

? Average output power = 17.5 W

? Power gain = 19 dB

? Drain efficiency = 48

? Intermodulation distortion = ?28 dBc

? Integrated ESD protection

? Excellent ruggedness

? High power gain

? High efficiency

? Excellent reliability

? Easy power control

? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

? Communication transmitter applications in the HF to 1400 MHz frequency range

? Industrial applications in the HF to 1400 MHz frequency range