BLF6G22-180PN分立半導體產品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features

■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 32 V and an IDq of 1600 mA:

? Average output power = 50 W

? Power gain = 17.5 dB (typ)

? Efficiency = 27.5

? ACPR = ?35 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (2000 MHz to 2200 MHz)

■ Internally matched for ease of use

■ Qualified up to a supply voltage of 32 V

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range