BLF6G38-10分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Features and benefits

■ Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 probability on

CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and

an IDq of 130 mA:

■ Qualified up to a maximum VDS operation of 32 V

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation

■ Internally matched for ease of use

■ Low gold plating thickness on leads

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers for base stations and multi carrier applications in the

3400 MHz to 3600 MHz frequency range