BLF7G22L-130分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features and benefits

■ Excellent ruggedness

■ High efficiency

■ Low Rth providing excellent thermal stability

■ Designed for broadband operation (2000 MHz to 2200 MHz)

■ Lower output capacitance for improved performance in Doherty applications

■ Designed for low memory effects providing excellent digital pre-distortion capability

■ Internally matched for ease of use

■ Integrated ESD protection

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range