BLF881S分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features and benefits

■ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:

◆ Peak envelope power load power = 140 W

◆ Power gain = 21 dB

◆ Drain efficiency = 49

◆ Third order intermodulation distortion = ?34 dBc

■ DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:

◆ Average output power = 33 W

◆ Power gain = 21 dB

◆ Drain efficiency = 34

◆ Shoulder distance = ?33 dBc (4.3 MHz from center frequency)

■ Integrated ESD protection

■ Excellent ruggedness

■ High power gain

■ High efficiency

■ Excellent reliability

■ Easy power control

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ Communication transmitter applications in the UHF band

■ Industrial applications in the UHF band