BLF881S分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

BLF881S屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLF881S晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent

ruggedness and broadband performance of this device makes it ideal for digital

transmitter applications.

Features and benefits

? 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent

drain current IDq = 0.5 A:

? Peak envelope power load power = 140 W

? Power gain = 21 dB

? Drain efficiency = 49

? Third order intermodulation distortion = ?34 dBc

? DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent

drain current IDq = 0.5 A:

? Average output power = 33 W

? Power gain = 21 dB

? Drain efficiency = 34

? Shoulder distance = ?33 dBc (4.3 MHz from center frequency)

? Integrated ESD protection

? Excellent ruggedness

? High power gain

? High efficiency

? Excellent reliability

? Easy power control

? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

? Communication transmitter applications in the UHF band

? Industrial applications in the UHF band