零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
StandardSurfaceMountPackage | Vectron Vectron International, Inc | Vectron | ||
TCXOEFCStandardStandardSurfaceMountPackageLowPhaseNoiseoptionLowProfile Features EFCStandard StandardSurfaceMountPackage LowPhaseNoiseoption LowProfile TypicalApplications PCSBaseStations LandMobileRadio CellularTelephony RadiointheLocalLoop | Vectron Vectron International, Inc | Vectron | ||
2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
High-PerformanceClockBuffer | TI1Texas Instruments 德州儀器 | TI1 | ||
2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER | TI1Texas Instruments 德州儀器 | TI1 | ||
2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER | TI1Texas Instruments 德州儀器 | TI1 | ||
2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER | TI1Texas Instruments 德州儀器 | TI1 | ||
High-PerformanceClockBuffer | TI1Texas Instruments 德州儀器 | TI1 | ||
2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
High-PerformanceClockBuffer | TI1Texas Instruments 德州儀器 | TI1 | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,6.2A,RDS(ON)=33m?@VGS=10V. RDS(ON)=38m?@VGS=4.5V. RDS(ON)=55m?@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,6.1A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=45mW@VGS=2.5V. RDS(ON)=60mW@VGS=1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=60mW@VGS=1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=60mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=60mW@VGS=1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT4.8Ampere FEATURE ???????*Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicatio | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
SOT-23Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
BELLING/上海貝嶺 |
24+ |
SOT23-6 |
30000 |
一級代理-原裝現(xiàn)貨/支持實單 |
詢價 | ||
BELLING/上海貝嶺 |
24+ |
SOT23-6 |
820000 |
全新原廠原裝正品支持實單 |
詢價 | ||
BRIGHT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
BRIGHT |
24+ |
LED |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價 |
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