首頁 >BLM>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

BLM03EB500SN1B

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.LowDCResistance.LargeRatedCurrent. 3.ThesmallsizeofBLM03Eseries(0.6x0.3mm)is suitablefornoisesupp

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03EB500SN1D

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.LowDCResistance.LargeRatedCurrent. 3.ThesmallsizeofBLM03Eseries(0.6x0.3mm)is suitablefornoisesupp

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03EB500SN1J

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.LowDCResistance.LargeRatedCurrent. 3.ThesmallsizeofBLM03Eseries(0.6x0.3mm)is suitablefornoisesupp

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03EB500SZ1

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.LowDCResistance.LargeRatedCurrent. 3.ThesmallsizeofBLM03Eseries(0.6x0.3mm)is suitablefornoisesupp

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03EB500SZ1_V01

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.LowDCResistance.LargeRatedCurrent. 3.ThesmallsizeofBLM03Eseries(0.6x0.3mm)is suitablefornoisesupp

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03EB500SZ1B

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.LowDCResistance.LargeRatedCurrent. 3.ThesmallsizeofBLM03Eseries(0.6x0.3mm)is suitablefornoisesupp

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03EB500SZ1D

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.LowDCResistance.LargeRatedCurrent. 3.ThesmallsizeofBLM03Eseries(0.6x0.3mm)is suitablefornoisesupp

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03EB500SZ1J

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.LowDCResistance.LargeRatedCurrent. 3.ThesmallsizeofBLM03Eseries(0.6x0.3mm)is suitablefornoisesupp

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03HB191SN1

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.ThesmallsizeofBLM03Hseries(0.6x0.3mm)is suitablefornoisesuppressioninsmallequipment suchascellular

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLM03HB191SN1_V01

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1.Horizontalwindinginnercoilstructure enableslowstoragecapacitancewhichresultto highnoisesuppressionperformance. EffectiveinLTErangeupto2.6GHzfrom700MHz. 2.ThesmallsizeofBLM03Hseries(0.6x0.3mm)is suitablefornoisesuppressioninsmallequipment suchascellular

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

晶體管資料

  • 型號:

    BLM

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    表面帖裝型 (SMD)_射頻/高頻放大 (HF)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    30V

  • 最大電流允許值:

    0.05A

  • 最大工作頻率:

    600MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    2SC4771K,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號:

    H-15

  • vtest:

    30

  • htest:

    600000000

  • atest:

    0.05

  • wtest:

    0

詳細(xì)參數(shù)

  • 型號:

    BLM

  • 制造商:

    MURATA

  • 制造商全稱:

    Murata Manufacturing Co., Ltd.

  • 功能描述:

    DESIGN ENGINEERING KITS

供應(yīng)商型號品牌批號封裝庫存備注價格
MURATA/村田
22+
SMD
20000
保證原裝正品,假一陪十
詢價
MURATA
17+
12063216
6200
100%原裝正品現(xiàn)貨
詢價
mur
23+
30000
國外原裝真實現(xiàn)貨庫存,專業(yè)定貨,特價
詢價
MURATA
24+/25+
2225
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
村田
23+
SMD
30000
原裝正品,假一罰十
詢價
MURATA
2020+
0603磁珠
5800
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
MURATA
24+
SMD
20000
原裝現(xiàn)貨假一罰十
詢價
MURATA
2022+
7600
原廠原裝,假一罰十
詢價
MURATA
24+
0805
5645
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
MURATA
24+
1206
3600
絕對原裝!現(xiàn)貨熱賣!
詢價
更多BLM供應(yīng)商 更新時間2025-4-23 14:50:00