BLM8AD22S-60ABG分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

BLM8AD22S-60ABG屬于分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLM8AD22S-60ABG晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The BLM8AD22S-60ABG is a dual section solution using Ampleon’s state of the art GEN8

LDMOS technology. It includes a 45 W 2-stage fully integrated Doherty MMIC in

section A, and a 15 W, 2-stage MMIC in section B, allowing a 3-way 1:2:1 Doherty when

both sections are externally combined. The carrier and peaking devices, input splitter and

output combiner, of the 2-stage fully integrated Doherty MMIC of section A are integrated

in package. This device is perfectly suited as final stage in massive MIMO or small cell

applications in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing.

Features and benefits

? Integrated input splitter in section A

? Integrated output combiner in section A

? Very high efficiency thanks to 3-way Doherty architecture

? Designed for broadband operation (frequency 2100 MHz to 2200 MHz)

? Integrated temperature compensated bias

? Independent control of carrier and peaking bias

? Integrated ESD protection

? Excellent thermal stability

? Source impedance 50 ?; high power gain

? For RoHS compliance see the product details on the Ampleon website

Applications

? RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 2100 MHz to 2200 MHz frequency range