BLM8G0710S-30PB分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

BLM8G0710S-30PB屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLM8G0710S-30PB晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類(lèi)型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state

of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general

purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz.

Available in gull wing or straight lead outline.

Features and benefits

? Designed for broadband operation (frequency 700 MHz to 1000 MHz)

? High section-to-section isolation enabling multiple combinations

? Integrated temperature compensated bias

? Biasing of individual stages is externally accessible

? Integrated ESD protection

? Excellent thermal stability

? High power gain

? On-chip matching for ease of use

? For RoHS compliance see the product details on the Ampleon website

Applications

? RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency

range. Possible circuit topologies are the following as also depicted in Section 8.1:

? Dual section or single ended

? Doherty

? Quadrature combined

? Push-pull