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BLT0009

Photoelectric Sensors

BLT21M-001-P-S4 Basicfeatures Approval/ConformitycULus CE UKCA WEEE BasicstandardIEC60947-5-2 PrincipleofoperationLuminescencesensor Series21M StyleSquare Connectioncanberotated

BalluffBalluff Korea Ltd.

巴魯夫巴魯夫集團(tuán)

BLT11

NPN 2GHz RF POWER TRANSISTOR

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedina4-pindual-emitterSOT103plasticpackage. FEATURES ?Highpowergain ?Highefficiency ?Smallsizediscretepoweramplifier ?1.9GHzoperatingarea ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?C

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT13

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplasticSOT96-1(SO8)SMDpackage. FEATURES ?Highefficiency ?Highgain ?Internalpre-matchedinput. APPLICATIONS ?Hand-heldradioequipmentincommonemitterclass-ABoperationfor1.8GHzTimeDivisionMultipleAcce

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT50

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaSOT223surfacemountedenvelopeanddesignedprimarilyforuseinhand-heldradioequipmentinthe470MHzcommunicationsband. FEATURES ?SMDencapsulation ?Goldmetallizationensuresexcellentreliability.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT50

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLT52

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialpowertransistorencapsulatedinaceramicSOT409ASMDpackage. FEATURES ?Emitterballastingresistorsforanoptimumtemperatureprofile ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Commonemitterclass-Boperationinportable

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT53

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedina4-leadSOT122Dstudlessenvelopewithaceramiccap.Itisdesignedforcommonemitter,class-Boperationinportableradiotransmittersinthe470MHzcommunicationsband.Allleadsareisolatedfromthemountingflange. FEAT

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT53

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedina4-leadSOT122Dstudlessenvelopewithaceramiccap.Itisdesignedforcommonemitter,class-Boperationinportableradiotransmittersinthe470MHzcommunicationsband.Allleadsareisolatedfromthemountingflange. FEAT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BLT5BPT680LN1

It can be used under the -55 ??to 150 ??usage environment

1.Itcanbeusedunderthe-55℃to+150℃ usageenvironment. 2.Meetslargecurrentupto11Amax. suitableforpowerlines. 3.Meetstosurfacemounting. 4.Goodbiascurrentcharacteristicsenables lessdropdownofimpedanceunderlargecurrent. Application Generalpowerlines.

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLT5BPT680LN1B

It can be used under the -55 ??to 150 ??usage environment

1.Itcanbeusedunderthe-55℃to+150℃ usageenvironment. 2.Meetslargecurrentupto11Amax. suitableforpowerlines. 3.Meetstosurfacemounting. 4.Goodbiascurrentcharacteristicsenables lessdropdownofimpedanceunderlargecurrent. Application Generalpowerlines.

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLT5BPT680LN1L

It can be used under the -55 ??to 150 ??usage environment

1.Itcanbeusedunderthe-55℃to+150℃ usageenvironment. 2.Meetslargecurrentupto11Amax. suitableforpowerlines. 3.Meetstosurfacemounting. 4.Goodbiascurrentcharacteristicsenables lessdropdownofimpedanceunderlargecurrent. Application Generalpowerlines.

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

BLT61

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialpowertransistorencapsulatedinaSOT96-1(SO8)package. FEATURES ?Highefficiency ?Highgain ?Internalpre-matchedinput ?Lowsupplyvoltage. APPLICATIONS ?Hand-heldradioequipmentincommonemitterclass-AB operationfor900MHzcommunic

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT70

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplasticSOT223HSMDpackage. FEATURES ?Veryhighefficiency ?Lowsupplyvoltage. APPLICATIONS ?Hand-heldradioequipmentincommonemitterclass-ABoperationinthe900MHzcommunicationband.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT70

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLT71

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaSOT223envelope. FEATURES ?Veryhighefficiency ?Lowsupplyvoltage. APPLICATIONS ?Hand-heldradioequipmentincommonemitterclass-ABoperationinthe900MHzcommunicationsband.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT80

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplasticSOT223SMDpackage. FEATURES ?SMDencapsulation ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Hand-heldradioequipmentinthe900MHz communicationband.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT80

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLT81

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplasticSOT223SMDpackage. FEATURES ?SMDencapsulation ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Hand-heldradioequipmentinthe900MHz communicationband.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLT81

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLT82

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplasticSOT96-1(SO8)SMDpackage. FEATURES ?Highefficiency ?Highgain ?Internalpre-matchedinput. APPLICATIONS ?Hand-heldradioequipmentincommonemitterclass-AB operationfor900MHzTimeDivisionMultiple

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào)：

    BLT

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    NPN 2GHz RF POWER TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY/威世
2306+
DIP
17110
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價(jià)
VISHAY
13+
DIP
18368
原裝分銷
 詢價(jià)
VISHAY
24+
DIP
2500
詢價(jià)
VISHAY原裝
22+23+
DIP
31323
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
PHILIPS/飛利浦
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
PHILIPS
22+
SOT122A
8000
原裝正品支持實(shí)單
 詢價(jià)
VISHAY/威世
24+
DIP
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
JST/日壓
22+
連接器
728922
代理-優(yōu)勢(shì)-原裝-正品-現(xiàn)貨*期貨
 詢價(jià)
JST/日壓
23+
223805
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
JST
21+
N/A
200000
專注連接器,連接一切可能
 詢價(jià)
更多BLT供應(yīng)商 更新時(shí)間2025-1-17 15:57:00

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