零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BLV740 | N-channel Enhancement Mode Power MOSFET | BellingSHANGHAI BELLING CO., LTD. 上海貝嶺上海貝嶺股份有限公司 | Belling | |
ULTRA-FASTRECOVERYApproximately25AMPERESSINGLE-PHASE,FULL-WAVEBRIDGES | edi Electronic devices inc. | edi | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
EnhancedClass1Bluetoothv2.1Module | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
EnhancedClass1Bluetoothv2.1Module | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
EnhancedClass1Bluetoothv2.1Module | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
EnhancedClass1Bluetoothv2.1Module | LSTD Laird Tech Smart Technology | LSTD | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. ■Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON) Highpowerandcurrenthandingcapability Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 400V,9A,RDS(ON)=0.55W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. ■Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET |
詳細(xì)參數(shù)
- 型號:
BLV740
- 制造商:
BELLING
- 制造商全稱:
SHANGHAI BELLING CO., LTD.
- 功能描述:
N-channel Enhancement Mode Power MOSFET
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Belling |
1651+ |
TO220 |
8660 |
只做原裝進(jìn)口,假一罰十 |
詢價 | ||
BELING/上海貝嶺 |
24+ |
TO220-AB |
15000 |
原裝正品原廠發(fā)貨 |
詢價 | ||
23+ |
DIP |
7500 |
正品原裝貨價格低qq:2987726803 |
詢價 | |||
BL |
2023+ |
TO-220 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價 | ||
PHILIPS |
2022 |
TO-57 |
83 |
原廠原裝正品,價格超越代理 |
詢價 | ||
PH |
24+ |
580 |
詢價 | ||||
PH |
23+ |
高頻管 |
220 |
專營高頻管模塊,全新原裝! |
詢價 | ||
PHILIPS/飛利浦 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
PHILIPS |
23+ |
TO-57 |
5177 |
現(xiàn)貨 |
詢價 | ||
PHILIPS |
22+ |
高頻管 |
350 |
十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售! |
詢價 |
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