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首頁 >BM-6060G>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
C6060A	文件：75.27 Kbytes Page：1 Pages	17SP227/30TCPEPVCComputerCable	GENERALGeneral Cable Technologies Corporation 通用電氣公司美國通用電氣公司	GENERAL
CEB6060	文件：510.01 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060L	文件：516.75 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060L	文件：405.18 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060L	文件：544.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB6060LR	文件：534.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060N	文件：426.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060N	文件：624.91 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,42A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB6060R	文件：81.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060R	文件：527.84 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED6060L	文件：785.85 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,48A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=29mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED6060N	文件：425.79 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED6060N	文件：425.79 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED6060N	文件：623.04 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,34A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. TO-251&TO-252package.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED6060R	文件：42.08 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP6060	文件：510.01 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP6060L	文件：516.75 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP6060L	文件：544.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP6060LR	文件：534.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP6060N	文件：426.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳硅原半導(dǎo)體有限公司	BM-6060G	MMC	23+	QFN	28533	原盒原標(biāo),正品現(xiàn)貨誠信經(jīng)營價(jià)格美麗假一罰十!	詢價(jià)
深圳市向鴻偉業(yè)電子有限公司	BM-6060G	MMC	2403+	QFN	11809	原裝現(xiàn)貨!歡迎隨時(shí)咨詢!	詢價(jià)
深圳市明嘉萊科技有限公司	BM-6061G	MMC	24+	Communication802.11b	990000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	BM60B-SHLDS-G-TFT	JST	23+	AN	6500	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	BM60B-SHLDS-G-TFT	JST	23+	AN	6500	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市德力誠信科技有限公司	BM60B-SRDS-G-TF	JST	24+	con	2500	CJT品牌降本替代型號(hào)A1002WV-S-2x30P-G	詢價(jià)
深圳廊盛科技有限公司	BM61-00021C	BUGIL	22+	原廠封裝	50000	只做原裝正品,假一罰十,歡迎咨詢	詢價(jià)
深圳市芯皇電子有限公司	BM61-00021C	BUGIL	23+		66600	專業(yè)芯片配單原裝正品假一罰十	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	BM-6101A	NA	23+		10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	BM6101FV-C	ROHM	1844+	SSOP-B20W	9852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)

更多BM-6060G供應(yīng)商更新時(shí)間2025-1-18 10:16:00

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