首頁 >BMI-S-205-F>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BMI-S-205-F | 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 類別:RF/IF,射頻/中頻和 RFID 射頻屏蔽 描述:RF SHIELD 1\ | Laird Technologies EMI Laird Technologies EMI | Laird Technologies EMI | |
包裝:散裝 類別:RF/IF,射頻/中頻和 RFID 射頻屏蔽 描述:RF SHIELD 1\ | Laird Technologies EMI Laird Technologies EMI | Laird Technologies EMI | ||
LED | BRIGHTBRIGHT LED ELECTRONICS CORP 步來特電器寧波步來特電器有限公司 | BRIGHT | ||
POLConverterModulefor5VSystemIntermediateBus Description TheBR205isathintypePOLconvertermoduleswithanindustrystandardexteriorshapeandfootprint,responsivetoveryhighspeedloadsandcompatiblewithceramiccapacitors. FeaturesandBenefits ?Industrystandardfootprint ?Improvedsoldering:gold-platedpadsan | SankenSanken electric 三墾三墾電氣株式會社 | Sanken | ||
POLConverterModulefor5VSystemIntermediateBus | SankenSanken electric 三墾三墾電氣株式會社 | Sanken | ||
ULTRA-FASTRECOVERYSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISP.C.BOARDMOUNTING | edi Electronic devices inc. | edi | ||
ULTRA-FASTRECOVERYSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISP.C.BOARDMOUNTING | edi Electronic devices inc. | edi | ||
P-channelenhancementmodeMOStransistor GENERALDESCRIPTION P-channel,enhancementmode,logiclevel,field-effectpowertransistor.Thisdevicehaslowthresholdvoltageandextremelyfastswitchingmakingitidealforbatterypoweredapplicationsandhighspeeddigitalinterfacing. FEATURES ?Verylowthresholdvoltage ?Fastswit | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
P-channelenhancementmodeMOStransistor FEATURES ?Verylowthresholdvoltage ?Fastswitching ?Logiclevelcompatible ?Subminiaturesurfacemount package GENERALDESCRIPTION P-channel,enhancementmode, logiclevel,field-effectpower transistor.Thisdevicehaslow thresholdvoltageandextremely fastswitchingmakingi | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
OptiMOS2Small-Signal-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Small-Signal-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-channelenhancementmodeverticalD-MOStransistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelenhancementmodeverticalD-MOStransistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
P-channelenhancementmodeverticalD-MOStransistor DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES ?VerylowRDS(on) ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching ?Nosecondarybreakdown | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
OptiMOS??Small-Signal-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS??Small-Signal-Transistor Features ?N-channel ?Enhancementmode ?SuperLogiclevel(2.5Vrated) ?Avalancherated ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | ZPSEMI ZP Semiconductor | ZPSEMI | ||
OptiMOS2Small-Signal-Transistor Features ?N-channel ?Enhancementmode ?SuperLogiclevel(2.5Vrated) ?Avalancherated ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | TYSEMITY Semiconductor Co., Ltd 臺灣TY半導(dǎo)體臺灣TY半導(dǎo)體有限公司 | TYSEMI | ||
SOT-23Plastic-EncapsulateMOSFETS FEATURE HighdensecelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrentcapability | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
DC/DCConverters | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
POWERTRANSISTORS(2.5A,1300-1500V,36W) HORIZONTALDEFLECTIONTRANSISTOR 2.5AMPEREPOWERTRANSISTORS1300-1500VOLTS36WATTS | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC |
產(chǎn)品屬性
- 產(chǎn)品編號:
BMI-S-205-F
- 制造商:
Laird Technologies EMI
- 類別:
RF/IF,射頻/中頻和 RFID > 射頻屏蔽
- 系列:
SMT 2 Piece
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 類型:
框架
- 高度 - 總體:
0.236"(6.00mm)
- 長度 - 總體:
1.500"(38.10mm)
- 寬度 - 總體:
1.000"(25.40mm)
- 安裝類型:
表面貼裝型
- 描述:
RF SHIELD 1\
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
LAIRD |
140 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | ||||
LAIRD |
2023+ |
新 |
80000 |
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) | ||
LAIRDTECHNOLOGIES |
2021+ |
NA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
LAIRD |
20+ |
射頻元件 |
3255 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
LAIRD |
22+ |
0 |
692 |
原廠原裝,價(jià)格優(yōu)勢!13246658303 |
詢價(jià) | ||
LAIRD |
22+ |
NA |
22 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
LAIRD |
* |
#N/A |
38421 |
現(xiàn)貨庫存,實(shí)單請給接受價(jià)格 |
詢價(jià) | ||
LAIRD |
* |
20000 |
原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展 |
詢價(jià) | |||
LAIRD |
1 |
優(yōu)勢貨源原裝正品 |
詢價(jià) | ||||
LAIRD TECHNOLOGIES INC |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) |
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