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首頁(yè) >BN-128FB>規(guī)格書(shū)列表

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BSP128	文件：50.8 Kbytes Page：8 Pages	N-channelenhancementmodeverticalD-MOStransistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BU128	文件：15.53 Kbytes Page：1 Pages	BipolarNPNDeviceinaHermeticallysealedTO3	SEME-LAB Seme LAB	SEME-LAB
BUL128	文件：79.68 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BUL128	文件：72.78 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BUL128	文件：235.5 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BUL128	文件：168.91 Kbytes Page：5 Pages	HighVoltageFast-SwitchingNPNPowerTransistor DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	SUNTAC Suntac Electronic Corp.	SUNTAC
BUL128	文件：65.379 Kbytes Page：1 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign	TGS Tiger Electronic Co.,Ltd	TGS
BUL128	文件：265.57 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
BUL128D	文件：66.76 Kbytes Page：3 Pages	SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
BUL128D	文件：65.58 Kbytes Page：1 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd	TGS Tiger Electronic Co.,Ltd	TGS
BUL128D	文件：267.21 Kbytes Page：2 Pages	SiliconNPNPowerTransistor EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
BUL128DB	文件：193.57 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforelectronicballastsforfluorescentlighting.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
BUL128D-B	文件：72.78 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BUL128D-B	文件：228.24 Kbytes Page：8 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BUL128FP	文件：78.76 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BULB128	文件：216.04 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMulti-EpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BULB128D	文件：210.59 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BULK128	文件：83.21 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BULK128	文件：219.98 Kbytes Page：7 Pages	HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
BULK128	文件：225.08 Kbytes Page：11 Pages	Highvoltagefast-switchingNPNpowertransistor	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

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詳細(xì)參數(shù)

型號(hào)：
BN-128FB
制造商：
Panasonic Industrial Devices

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深圳芯力源電子科技有限公司	BN1351-2.5X8	BOSSARD INTERNA	23+	原廠封裝	5177	現(xiàn)貨	詢(xún)價(jià)
深圳市賽爾通科技有限公司	BN1356-M10	BOSSA	23+		31384		詢(xún)價(jià)
深圳市科恒偉業(yè)電子有限公司	BN135VM		2017+	DIP8	28562	只做原裝正品假一賠十!	詢(xún)價(jià)
深圳市鼎盛源芯科技有限公司	BN150W	原廠	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來(lái)電咨詢(xún)	詢(xún)價(jià)
上海金慶電子技術(shù)有限公司	BN150W		新		105	全新原裝貨期兩周	詢(xún)價(jià)
上海市鑫鴻達(dá)電子	BN150W		2022+		101	全新原裝貨期兩周	詢(xún)價(jià)
標(biāo)準(zhǔn)國(guó)際(香港)有限公司	BN150W-15922R	IDEC			50	公司優(yōu)勢(shì)庫(kù)存熱賣(mài)中!!	詢(xún)價(jià)
深圳市科雨電子有限公司	BN153	CINCH	20+	連接器	93	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢(xún)價(jià)
深圳市易訊博科技有限公司	BN153	Cinch Trompeter	22+	NA	65	加我QQ或微信咨詢(xún)更多詳細(xì)信息,	詢(xún)價(jià)
深圳市一線(xiàn)半導(dǎo)體有限公司	BN153S		24+	DIP-8	5000		詢(xún)價(jià)

更多BN-128FB供應(yīng)商更新時(shí)間2024-12-20 11:51:00

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