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BN0C31BH

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORYORGANIZATION PROGRAMMEMORY:Upto4Kbytesoftheprogrammemorycanresideon-chip(except80C31BH).Inadditionthedevicecanaddressupto64Kofprogrammemoryexternaltothechip. DATAMEMORY:Thismicrocontrollerhasa128x8on-chipRAM.Inadditionitcanaddressupto64Kb

IntelIntel Corporation

英特爾

BN0C51BH

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORYORGANIZATION PROGRAMMEMORY:Upto4Kbytesoftheprogrammemorycanresideon-chip(except80C31BH).Inadditionthedevicecanaddressupto64Kofprogrammemoryexternaltothechip. DATAMEMORY:Thismicrocontrollerhasa128x8on-chipRAM.Inadditionitcanaddressupto64Kb

IntelIntel Corporation

英特爾

BN150W

Terminal Blocks

Keyfeatures: ?Touch-downterminalswithspring-loadedcaptivescrews ?Jumpersavailableupto50Amodel ?Fuseblockwithorwithoutblown-fuseindicatorinneonorLED ?Mountson35mmstandardDINrail

IDECIDEC Corporation

和泉電氣IDEC株式會(huì)社

BN1A3Q

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=1.0k?,R2=10k?) ?ComplementarytransistorwithBA1A3Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BN1A3Q

COMPOUND TRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=1.0kΩ,R2=10kΩ) ?ComplementarytransistorwithBA1A3Q

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BN1A4P

PNP SILICON TRANSISTOR

DESCRIPTION TheBN1A4Pisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BN1A4Z

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=10k?) ?ComplementarytransistorwithBA1A3Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BN1A4Z

on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

FEATURES ?On-chipbiasresistor (R1=10kΩ)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BN1F4M

The BN1F4M is designed for use in medium speed switching circuit.

DESCRIPTION TheBN1F4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BN1F4N

The BN1F4N is esiged for use in medium speed switching circuit.

DESCRIPTION TheBN1F4Nisdsignedforuseinmediumspeedswitchingcircuit. FEATURES ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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24+
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51000
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南京依納科技
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
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2018+
35mm12mm
6528
科恒偉業(yè)!承若只做進(jìn)口原裝正品假一賠十!1581728776
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ST
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200000
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XPT矽普特
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TSSOP16
10000
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493
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164
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