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BUZ103

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUZ103AL

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-ratedLogicLeveldv/dtrated)

?Nchannel ?Enhancementmode ?Avalanche-rated ?LogicLevel ?dv/dtrated ?Lowon-resistance ?175°Coperatingtemperature ?alsoinTO-220SMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ103S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated175?Coperatingtemperature)

?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature ?alsoinSMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ103SL

SIPMOSPowerTransistor(NchannelEnhancementmodeLogicLevelAvalanche-rateddv/dtrated)

?Nchannel ?Enhancementmode ?LogicLevel ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature ?alsoinSMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BYP103

FREDDiode(FastrecoveryepitaxialdiodeSoftrecoverycharacteristics)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BYP103

FREDDiode

FEATURES ·LowSwitchingLosses ·LowLeakageCurrent ·Ultrafastrecoverytime APPLICATIONS ·PFC ·Half-bridge/full-bridgeswitched-modepowersupplies ·Half-bridgelightingballasts

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BYX103G

High-voltagesoft-recoverycontrolledavalancherectifiers

DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched.Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEA

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

C103

OperateonthemainACline100Vand200V

OperateonthemainACline100Vand200V

SankenSanken electric

三墾三墾電氣株式會社

C103

SO-thru200-voltselection

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

C-103

Krimptite??ParallelSplicefor10-12AWGWire

MOLEX4Molex Electronics Ltd.

莫仕

詳細參數(shù)

  • 型號：

    BP103BF

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    .NPN-Silizium-Fototransistor Silicon NPN Phototransistor

供應(yīng)商型號品牌批號封裝庫存備注價格
SIEMENS原裝
25+
DIP
65428
百分百原裝現(xiàn)貨 實單必成
 詢價
TOYOTA
24+
SOP
952
詢價
sie
24+
500000
行業(yè)低價,代理渠道
 詢價
OSRAM/歐司朗
23+
TO-18-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
OSRAM/歐司朗
24+
TO-18-3
60000
全新原裝現(xiàn)貨
 詢價
VISHAY
13+
10598
原裝分銷
 詢價
SIEMENS
24+/25+
1658
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
VISHAY
2017+
DIP2
8598
只做原裝正品假一賠十!
 詢價
VISHAY
23+
DIP-2
5000
原裝正品,假一罰十
 詢價
VISHAY
24+
DIP-2
5000
只做原裝公司現(xiàn)貨
 詢價
更多BP103BF供應(yīng)商 更新時間2025-5-3 20:00:00

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