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BPDV3120RQ-VF-FP

包裝:散裝 類別:傳感器,變送器 光學(xué)傳感器 - 光電,工業(yè) 描述:PHOTODETECTOR BALANCED 70 GHZ DU

Finisar

Finisar Corporation.

C3120

TYPECMP/CL3P

3C187/26BCFLEXFLEXTYPECMP/CL3P

GENERALGeneral Cable Technologies Corporation

通用電氣公司美國通用電氣公司

CC3120

SimpleLinkWi-FiWirelessNetworkProcessorInternet-of-ThingsSolutionforMCUApplications

TI1Texas Instruments

德州儀器

CC3120MOD

SimpleLinkWi-FiCERTIFIEDNetworkProcessorInternet-of-ThingsModuleSolutionforMCUApplications

TI1Texas Instruments

德州儀器

CC3120MODRNMMOBR

SimpleLinkWi-FiCERTIFIEDNetworkProcessorInternet-of-ThingsModuleSolutionforMCUApplications

TI1Texas Instruments

德州儀器

CC3120RNMARGKR

SimpleLinkWi-FiWirelessNetworkProcessorInternet-of-ThingsSolutionforMCUApplications

TI1Texas Instruments

德州儀器

CC3120RNMARGKT

SimpleLinkWi-FiWirelessNetworkProcessorInternet-of-ThingsSolutionforMCUApplications

TI1Texas Instruments

德州儀器

CC3120RNMARGKT/R

SimpleLinkWi-FiWirelessNetworkProcessorInternet-of-ThingsSolutionforMCUApplications

TI1Texas Instruments

德州儀器

CEB3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB3120

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,36A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,10A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3120

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEP3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,36A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM3120JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT10Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchin

CHENMKOchenmko

力勤股份有限公司

CHM3120PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT36Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    BPDV3120RQ-VF-FP

  • 制造商:

    Finisar Corporation

  • 類別:

    傳感器,變送器 > 光學(xué)傳感器 - 光電,工業(yè)

  • 包裝:

    散裝

  • 感應(yīng)方法:

    光電探測(cè)器

  • 電壓 - 供電:

    2.5V ~ 3.8V

  • 連接方法:

    帶連接器的纜線

  • 工作溫度:

    0°C ~ 75°C

  • 描述:

    PHOTODETECTOR BALANCED 70 GHZ DU

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FINISAR
20+
傳感器
16
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II-VI / Finisar
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QFN
5000
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TI/德州儀器
22+
QFN
25000
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UNIVERSAL
1
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N/A
SOT723
98000
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2022+
52
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Hammond
2020+
N/A
155
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原廠
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10000
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更多BPDV3120RQ-VF-FP供應(yīng)商 更新時(shí)間2021-9-14 10:50:00