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首頁 >BSC-B-M-350>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
BSP350	文件：66.21 Kbytes Page：6 Pages	MiniPROFET(High-sideswitchShort-circuitprotectionOvertemperatureprotectionwithhysteresis) MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Reversebatteryprotection1) ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Maxi	SIEMENSSiemens Ltd 西門子德國西門子股份公司	SIEMENS
BSP350	文件：68.19 Kbytes Page：6 Pages	MiniPROFET(High-sideswitchShort-circuitprotectionOvertemperatureprotectionwithhysteresis) MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Reversebatteryprotection1) ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Maximumcurrentinternal	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
BSWM350DH-PCB	文件：194.41 Kbytes Page：4 Pages	Solidstatepressureswitchwithanalogoutput	SENSORTECHNICS Sensortechnics GmbH	SENSORTECHNICS
BSWM350DV-PCB	文件：194.41 Kbytes Page：4 Pages	Solidstatepressureswitchwithanalogoutput	SENSORTECHNICS Sensortechnics GmbH	SENSORTECHNICS
BUZ350	文件：241.61 Kbytes Page：9 Pages	SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated) SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated	SIEMENSSiemens Ltd 西門子德國西門子股份公司	SIEMENS
BUZ350	文件：98.1 Kbytes Page：8 Pages	SIPMOSPowerTransistor SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
BUZ350	文件：347.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
C350	文件：244.59 Kbytes Page：6 Pages	PhaseControlSCR115AmperesAvg500-1300Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □	POWEREX Powerex Power Semiconductors	POWEREX
C350	文件：580.55 Kbytes Page：40 Pages	MILITARYSPECIFCATIONSONBACK	KEMETKEMET Corporation 基美基美公司	KEMET
C350	文件：971.77 Kbytes Page：16 Pages	MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED	KEMETKEMET Corporation 基美基美公司	KEMET
C350	文件：935.35 Kbytes Page：14 Pages	MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED Multilayerceramiccapacitorsareavailableinavarietyofphysicalsizesandconfigurations,includingleadeddevicesandsurfacemountedchips.Leadedstylesincludemoldedandconformallycoatedpartswithaxialandradialleads.However	KEMETKEMET Corporation 基美基美公司	KEMET
C350	文件：1.07076 Mbytes Page：14 Pages	MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED	KEMETKEMET Corporation 基美基美公司	KEMET
C350	文件：5.29445 Mbytes Page：66 Pages	AluminumElectrolyticCapacitors	KEMETKEMET Corporation 基美基美公司	KEMET
C350	文件：971.77 Kbytes Page：16 Pages	MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED	KEMETKEMET Corporation 基美基美公司	KEMET
C350	文件：8.35916 Mbytes Page：60 Pages	MAGNETICSFORRF,POWER,FILTERANDDATAAPPLICATIONS	COILCRAFTCoilcraft lnc. 線藝美國線藝公司	COILCRAFT
C350E	文件：244.59 Kbytes Page：6 Pages	PhaseControlSCR115AmperesAvg500-1300Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □	POWEREX Powerex Power Semiconductors	POWEREX
C350M	文件：244.59 Kbytes Page：6 Pages	PhaseControlSCR115AmperesAvg500-1300Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □	POWEREX Powerex Power Semiconductors	POWEREX
C350N	文件：244.59 Kbytes Page：6 Pages	PhaseControlSCR115AmperesAvg500-1300Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □	POWEREX Powerex Power Semiconductors	POWEREX
C350N	文件：871.25 Kbytes Page：6 Pages	PhaseControlSCR115AmperesAverage1600Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □	POWEREX Powerex Power Semiconductors	POWEREX
C350P	文件：871.25 Kbytes Page：6 Pages	PhaseControlSCR115AmperesAverage1600Volts Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □	POWEREX Powerex Power Semiconductors	POWEREX

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詳細參數(shù)

型號：
BSC-B-M-350
制造商：
Samtec Inc
功能描述：
BSC - Bulk

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市威爾健半導體有限公司	BSCD054	ZOWIE	23+	1812	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳廊盛科技有限公司	BSCD054	ZOWIE	2022	1812	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
深圳市匯萊威科技有限公司	BSCD054		ZOWIE	1812	68900	原包原標簽100%進口原裝常備現(xiàn)貨!	詢價
深圳市得捷芯城科技有限公司	BSCD054	ZOWIE	23+	NA/	3000	優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價
深圳市永貝爾科技有限公司	BS-CD14RD	BRIGHT	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市一線半導體有限公司	BS-CD26RD	LEDBRIGHT	24+	DIP	60		詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	BS-CD26RD	LEDBRIGHT	23+	DIP	5000	原裝正品,假一罰十	詢價
深圳市維爾達電子有限公司	BS-CD26RD	LEDBRIGHT	2023+	DIP	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
深圳市創(chuàng)新跡電子有限公司	BS-CD26RD	LEDBRIGHT	23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀電子有限公司	BS-CD26RD	LEDBRIGHT	23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進口現(xiàn)貨	詢價

更多BSC-B-M-350供應商更新時間2024-10-25 11:00:00

詳細參數(shù)

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