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BSC025N03MSG

OptiMOS??M-SeriesPower-MOSFET

Features ?Optimizedfor5Vdriverapplication(Notebook,VGA,POL) ?LowFOMSWforHighFrequencySMPS ?100avalanchetested ?N-channel ?Verylowon-resistanceRDS(on)@VGS=4.5V ?ExcellentgatechargexRDS(on)product(FOM) ?QualifiedaccordingtoJEDEC1)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

G025N03T

N-ChannelEnhancementModePowerMOSFET

Description TheG025N03Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

RSR025N03

Switching(30V,2.5A)

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR025N03

4VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR025N03

N-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RSR025N03

4VDriveNchMOSFET

4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(TSMT3). Application Powerswitching,DC/DCconverter. Structure SiliconN-channel MOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR025N03FRATL

Nch30V2.5ASmallSignalMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR025N03HZG

Nch30V2.5ASmallSignalMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR025N03TL

N-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RSR025N03TL

4VDriveNchMOSFET

4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(TSMT3). Application Powerswitching,DC/DCconverter. Structure SiliconN-channel MOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    BSC025N03MS G

  • 功能描述：

    MOSFET OptiMOS 3 M-Series PWR-MOSFET 30V 100A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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INFINEON
24+
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1983
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32568
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更多BSC025N03MS G供應(yīng)商 更新時(shí)間2025-2-22 16:30:00

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