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BSC090N03LSG

OptiMOS??Power-MOSFET

OptiMOS?3Power-MOSFET Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel;Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC090N03LSG

OptiMOS??Power-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC090N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC090N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD090N03L

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤9m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPD090N03L

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤9m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPD090N03L

OptiMOS3Power-Transistor

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;Ro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD090N03LG

OptiMOS3Power-Transistor

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;Ro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD090N03LG

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF090N03LG

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    BSC090N03LS G

  • 功能描述:

    MOSFET OptiMOS 3 N-CH 30V 48A 9mOhms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
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INFINEON
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INF
24+
3900
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INFINEO
2020+
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4503
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Infineon
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7750
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INFINEON
17+
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6200
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INF
23+
TDSON8
5000
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Infineon
18+
NA
3000
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INFINEON
2018+
QFN
11256
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INFINEON
1119+
TDSON8
4138
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更多BSC090N03LS G供應(yīng)商 更新時(shí)間2025-1-31 15:00:00