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BSH111BK

55V,N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ?Lowthresholdvoltage ?Veryfastswitching ?TrenchMOSFETtechnology ?ElectroStatic

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BSM111

SIMOPACModule(PowermoduleSingleswitchNchannelEnhancementmode)

SIMOPAC?Module VDS=100V ID=200A RDS(on)=8.5m? ●Powermodule ●Singleswitch ●Nchannel ●Enhancementmode ●Packagewithinsulatedmetalbaseplate ●Packageoutline/Circuitdiagram:11)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BSM111AR

SIMOPACModule(PowermoduleSingleswitchNchannelEnhancementmode)

SIMOPAC?Module VDS=100V ID=200A RDS(on)=8.5m? ●Powermodule ●Singleswitch ●Nchannel ●Enhancementmode ●Packagewithinsulatedmetalbaseplate ●Packageoutline/Circuitdiagram:11)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BT111

BluetoothSmartReadyHCIModule

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

BT111

Bluetooth?SmartReadyHCIModule

KEYFEATURES ?Bluetoothv.4.0,dualmodecompliant ?SupportBluetoothclassic ?SupportsBluetoothlow energymasterandslavemode ?Radiocapabilities ?Transmitpower:+8dBm ?Receiversensitivity:-89dBm ?Line-of-sightrange:100+meters ?Integratedantenna ?Interfaces ?HCIov

SILABS

Silicon Laboratories

BT111-A-HCI

Bluetooth?SmartReadyHCIModule

KEYFEATURES ?Bluetoothv.4.0,dualmodecompliant ?SupportBluetoothclassic ?SupportsBluetoothlow energymasterandslavemode ?Radiocapabilities ?Transmitpower:+8dBm ?Receiversensitivity:-89dBm ?Line-of-sightrange:100+meters ?Integratedantenna ?Interfaces ?HCIov

SILABS

Silicon Laboratories

BU111

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BU111

SiliconNPNPowerTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

BUZ111

SIPMOSPowerTransistor(NchannelEnhancementmodeLogicLevelAvalanche-rateddv/dtrated)

Features ?Nchannel ?Enhancementmode ?Avalancherated ?LogicLevel ?dv/dtrated ?175?Coperatingtemperature

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ111

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature ?alsoinSMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ111S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature ?alsoinSMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ111S

SIPMOSPowerTransistor

Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated ?175?Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BUZ111S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.008Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BUZ111SL

SIPMOSPowerTransistor(NchannelEnhancementmodeLogicLevelAvalanche-rateddv/dtrated)

Features ?Nchannel ?Enhancementmode ?Avalancherated ?LogicLevel ?dv/dtrated ?175?Coperatingtemperature

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

CAPA111

1DDR3SO-DIMMsupportsupto4GBmemorycapacity

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

CAPA111

AMDA50MFCH

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

CDC111

1-LINETO9-LINEDIFFERENTIALLVPECLCLOCKDRIVER

TITexas Instruments

德州儀器美國德州儀器公司

CDC111FN

1-LINETO9-LINEDIFFERENTIALLVPECLCLOCKDRIVER

TITexas Instruments

德州儀器美國德州儀器公司

CDCLVP111

LOW-VOLTAGE1:10LVPECLWITHSELECTABLEINPUTCLOCKDRIVER

TITexas Instruments

德州儀器美國德州儀器公司

CDCLVP111

Low-Voltage1:10LVPECLWithSelectableInputClockDriver

TI1Texas Instruments

德州儀器

詳細參數(shù)

  • 型號：

    BSH111,235

  • 功能描述：

    MOSFET TAPE13 MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
NXP
22+
NA
45000
加我QQ或微信咨詢更多詳細信息,
 詢價
Nexperia USA Inc.
2022+
TO-236-3,SC-59,SOT-23-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
NXP
23+
SOT-23
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
NXP
2023+
SOT-23
8700
原裝現(xiàn)貨
 詢價
NXP恩智浦/PHILIPS飛利浦
24+
SOT-23
24000
新進庫存/原裝
 詢價
茂達
1742+
SOT23-3
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
NXP
22+
SOT-23
6500
全新原裝品牌專營
 詢價
NXP/恩智浦
21+
SOT23-3
19000
只做正品原裝現(xiàn)貨
 詢價
NXP/恩智浦
23+
SOT23-3
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
NXP
21+
N/A
10
原裝現(xiàn)貨假一賠十
 詢價
更多BSH111,235供應商 更新時間2025-1-2 10:08:00

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