BSP100

N-channel enhancement mode TrenchMOS transistor

VDSS=30V ID=6A RDS(ON)≤100m?(VGS=10V) RDS(ON)≤200m?(VGS=4.5V) GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fasts

BSP100

N-channel enhancement mode TrenchMOS? transistor

FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance GENERALDESCRIPTION N-channelenhancementmode field-effecttransistorinaplastic envelopeusing’trench’ technology. Applications:- ?Motorandrel

BSS100

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V

BSS100

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

BST100

P-channelenhancementmodeverticalD-MOStransistor

DESCRIPTION P-channelverticalD-MOStransistorTO-92variantenvelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES ?VerylowRDS(on) ?DirectinterfacetoC-MOS ?High-speedswitching ?Nosecondbreakdown

BT100

BatteryCapacityTester

ACmilliohmmeterchecksBatteryConditioninsecondsWhilethebatteryisinservice Features: ?On-linetestingwithoutdisconnectingbattery ?Built-indataloggerstoresupto999tests ?SimultaneouslymeasuresDCVoltageandACMilliohms ?Autopoweroff ?IncludesWindows?95/98/NT

BT100-AL

BatteryCapacityTester

ACmilliohmmeterchecksBatteryConditioninsecondsWhilethebatteryisinservice Features: ?On-linetestingwithoutdisconnectingbattery ?Built-indataloggerstoresupto999tests ?SimultaneouslymeasuresDCVoltageandACMilliohms ?Autopoweroff ?IncludesWindows?95/98/NT

BT100-TL

BatteryCapacityTester

ACmilliohmmeterchecksBatteryConditioninsecondsWhilethebatteryisinservice Features: ?On-linetestingwithoutdisconnectingbattery ?Built-indataloggerstoresupto999tests ?SimultaneouslymeasuresDCVoltageandACMilliohms ?Autopoweroff ?IncludesWindows?95/98/NT

BTA100

SpeciallyVarieties4Q-Triacs

BTS100

SmartHighsidePowerSwitchTEMPFET(PchannelEnhancementmodeTemperaturesensorwiththyristorcharacteristic)

Features ●Pchannel ●Enhancementmode ●Temperaturesensorwiththyristorcharacteristic ●Thedrainpiniselectricallyshortedtothetab

BTS100

SmartHighsidePowerSwitch

SmartHighsidePowerSwitch Features ●Pchannel ●Enhancementmode ●Temperaturesensorwiththyristorcharacteristic ●Thedrainpiniselectricallyshortedtothetab

BTS100

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

BU100

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-3package ?Highvoltagecapability APPLICATIONS ?Forhorizontaldeflectionoutputstage ofCTVreceiversandhighvoltalge, fastswitchingandindustrialapplications

BU100

SiliconNPNPowerTransistor

BUH100

POWERTRANSISTOR10AMPERES700VOLTS100WATTS

SWITCHMODENPNSiliconPlanarPowerTransistor TheBUH100hasanapplicationspecificstate–of–artdiedesignedforusein100WattsHalogenelectronictransformers.Thispowertransistorisspecificallydesignedtosustainthelargeinrushcurrentduringeitherthestart–upconditionsor

BUH100

POWERTRANSISTOR10AMPERES700VOLTS100WATTS

SWITCHMODE
NPNSiliconPlanarPowerTransistor TheBUH100hasanapplicationspecificstate–of–artdiedesignedforusein100WattsHalogenelectronictransformers. Thispowertransistorisspecificallydesignedtosustainthelargeinrushcurrentduringeitherthestart–upconditions

BUH100G

SWITCHMODENPNSiliconPlanarPowerTransistor

SWITCHMODENPNSiliconPlanarPowerTransistor TheBUH100Ghasanapplicationspecificstate?of?artdiedesignedforusein100WattsHalogenelectronictransformers. Thispowertransistorisspecificallydesignedtosustainthelargeinrushcurrentduringeitherthestartupconditionsorunder

BUJ100

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorintheTO92envelopeintendedforuseincompactfluorescentlampsandlowpowerelectroniclightingballasts,convertersandinverters,etc.

BUJ100

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorintheTO92envelopeintendedforuseincompactfluorescentlampsandlowpowerelectroniclightingballasts,convertersandinverters,etc.

BUJ100AT

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorintheSOT223envelopeintendedforuseincompactfluorescentlamps,lowpowerelectroniclightingballastsandsimilarhighfrequencyconvertersandinverters.