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BSS123A

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Zetex

Zetex Semiconductors

BSS123-G

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BSS123I

OptiMOSTMSmall-Signal-Transistor,100V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123K

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BSS123K

N-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplications

DIODES

Diodes Incorporated

BSS123K

NCEN-ChannelEnhancementModePowerMOSFET

GeneralFeatures ●VDS=100V,ID=0.17A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

BSS123L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BSS123L

MOSFETN-CHANNELPOWERMOSFET

DESCRIPTION TheBSS123L isavailableinSOT23package FEATURES ?AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

BSS123N

OptiMOS??Small-Signal-Transistor

Features ?N-channel ?Enhancementmode ?Logiclevel(4.5Vrated) ?Avalancherated ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123Q

N-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS123Qissuitableforautomotiveapplicat

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInp

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123W

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BSS123W

SOT-323Plastic-EncapsulateMOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS123W

N-ChannelEnhancementModeMOSFET

FUTUREWAFER

FutureWafer Tech Co.,Ltd

BSS123W

N-ChannelMOSFET

FEATURE ?SurfaceMountPackage ?HighDensityCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?RuggedandReliable APPLICATION ?SmallServoMotorControls ?PowerMOSFETGateDrivers ?SwitchingApplication

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS123WQ

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpe

DIODES

Diodes Incorporated

BUL123S

SiliconNPNtransistorinaTO-92PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BYD123

Ultrafastlow-lossrectifier

DESCRIPTION CavityfreecylindricalglassSOD81packagethroughImplotec?technology.Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號：

    BSS123,215

  • 功能描述：

    MOSFET N-CH TRNCH 100V .15A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Nexperia USA Inc.
24+
TO-236AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
NXP Semiconductors
2010
NA
9000
自營現(xiàn)貨,只做正品
 詢價
Nexperia(安世)
23+
SOT-23(TO-236)
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
NEXPERIA
23+
Tube
459000
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價
NXP
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
NXP
24+
3000
詢價
NXP/恩智浦
2020+
NA
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
Nexperia(安世)
2112+
SOT-23(SOT-23-3)
105000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
NXP(恩智浦)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價
NXP
22+
NA
45000
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 詢價
更多BSS123,215供應(yīng)商 更新時間2025-1-11 14:13:00

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