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BSS138CR

Advanced MOSFETprocess technology

FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●Fast

DIODES

Diodes Incorporated

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?AvailableinLeadFree/RoHSCompliantVersion(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes5and6)

DIODES

Diodes Incorporated

BSS138DW

DualN-Channel60V(D-S)MOSFET

?LowOn-Resistance:1.5 FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW

DualN-Channel60V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowOn-Resistance:2.5Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW

DualN-ChannelMOSFET

Feature ?HighdensitycelldesignforextremelylowRDS(on) ?RuggedandRelaible Application ?DirectLogic-LevelInterface:TTL/CMOS ?BatteryOperatedSystems ?Solid-StateRelays

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS138DWK

50VN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODES

Diodes Incorporated

BSS138DWQ

LowOn-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchin

DIODES

Diodes Incorporated

BSS138-G

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
SOT-23
475
詢價(jià)
Fairchild
23+
SOT-23
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
N/A
2447
SOT23-3
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
N/A
25+
SOT23-3
124
原裝正品,假一罰十!
 詢價(jià)
N/A
25+
SOT23-3
124
原裝正品,假一罰十!
 詢價(jià)
SSS
23+
SOT-23
57800
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
ON Semiconductor
2022+
TO-236-3,SC-59,SOT-23-3
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
DIODES/美臺(tái)
22+
SOT363
90000
正規(guī)代理渠道假一賠十
 詢價(jià)
DIODES/美臺(tái)
24+
SOT363
98000
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多BSS138CR供應(yīng)商 更新時(shí)間2025-3-13 16:30:00

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