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BX3053

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

CA3053

Differential/CascodeAmplifiersforCommercialandIndustrialEquipmentfromDCto120MHz

Description TheCA3028AandCA3028Baredifferential/cascodeamplifiersdesignedforuseincommunicationsandindustrialequipmentoperatingatfrequenciesfromDCto120MHz.TheCA3028BisliketheCA3028AbutiscapableofpremiumperformanceparticularlyincriticalDCanddifferentialampl

HARRIS

Harris Corporation

CA3053E

Differential/CascodeAmplifiersforCommercialandIndustrialEquipmentfromDCto120MHz

Description TheCA3028AandCA3028Baredifferential/cascodeamplifiersdesignedforuseincommunicationsandindustrialequipmentoperatingatfrequenciesfromDCto120MHz.TheCA3028BisliketheCA3028AbutiscapableofpremiumperformanceparticularlyincriticalDCanddifferentialampl

HARRIS

Harris Corporation

CEB3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-90A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.1mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-87A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.1mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3053

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-15A,RDS(ON)=7mΩ@VGS=-10V. RDS(ON)=15mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. ■ESDProtected:4000V

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-16.4A,RDS(ON)=5.8mW@VGS=-10V. RDS(ON)=9.1mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-90A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.1mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-87A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.1mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-93A,RDS(ON)=5mW@VGS=-10V. RDS(ON)=9mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

晶體管資料

  • 型號(hào)：

    BSTA3053

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    50HZ－Thy

  • 性質(zhì)：

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    800V

  • 最大電流允許值：

    0.6A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號(hào)：

    BSTA3053M,TAG606-800,TAG613-800,

  • 最大耗散功率：

  • 放大倍數(shù)：

  • 圖片代號(hào)：

    G-221

  • vtest：

    800

  • htest：

    999900

  • atest：

    0.6

  • wtest：

    0

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
BEST/倍思特
21+
NA
4600
中國(guó)航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者
 詢價(jià)
BOSCH
22+
SMD
518000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
SIEMENS
24+
MODULE
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
 詢價(jià)
SIEMENS
23+
MODULE
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
SIEMENS
23+
MODULE
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
-
23+
MODULE
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
24+
TO-66
314
詢價(jià)
SIEMENS
24+
TO-220
2987
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!
 詢價(jià)
SIEMENS
22+
TO-220
5100
全新原裝品牌專營(yíng)
 詢價(jià)
SIEMENS
23+
TO-220
4000
正品原裝貨價(jià)格低
 詢價(jià)
更多BSTA3053供應(yīng)商 更新時(shí)間2025-1-24 8:00:00

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