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BSZ100N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CMP100N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

D100N03L

N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET

Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize?”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

FIR100N03DFNG

30V-ChannelMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR100N03LG

30V-ChannelMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR100N03PG

30V-ChannelMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

HLDD100N03

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HM100N03

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM100N03D

HighdensitycelldesignforultralowRdson

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

PHB100N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB100N03LT

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■TrenchMOS?technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

RES100N03

Switching(30V,10A)

Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RRS100N03-TB

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RSH100N03

4VDriveNchMOSFET

4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Powerswitching,DC/DCconverter.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSS100N03

Switching(30V,?10A)

Switching(30V,±10A) Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). Applications Powerswitching,DC/DCconverter.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSS100N03FRA

Nch30V10APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSS100N03HZG

Nch30V10APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSS100N03TB

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RXH100N03

4VDriveNchMOSFET

4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

STD100N03L

N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET

Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize?”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
21+
TDSON-8
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)
詢價
Infineo
2020+
QFN8
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
Infineon/英飛凌
23+
20000
全新、原裝、現(xiàn)貨
詢價
INFINEON/英飛凌
22+
QFN8
20000
原裝現(xiàn)貨,實(shí)單支持
詢價
INFINEON/英飛凌
22+
QFN8
20000
原裝現(xiàn)貨,實(shí)單支持
詢價
ADI
23+
QFN8
8000
只做原裝現(xiàn)貨
詢價
ADI
23+
QFN8
7000
詢價
INFINEON/英飛凌
2223+
SMD
26800
只做原裝正品假一賠十為客戶做到零風(fēng)險
詢價
Infineon
24+
S3O8
7500
詢價
INFINEON
09PB
QFN
1570
全新原裝進(jìn)口自己庫存優(yōu)勢
詢價
更多BSZ100N03LSGIC供應(yīng)商 更新時間2025-1-7 9:10:00