首頁 >BSZ130N03MS>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
OptiMOS?? M-Series Power-MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintend | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
4.5VDriveNchMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
4VDriveNchMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Switching(30V,13A) ●Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). ●Application Powerswitching,DC/DCconverter. ●Structure SiliconN-channel MOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Nch30V13APowerMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Nch30V13APowerMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM |
詳細參數(shù)
- 型號:
BSZ130N03MS
- 制造商:
Infineon Technologies AG
- 制造商:
Rochester Electronics LLC
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
標準封裝 |
9158 |
原廠渠道供應,大量現(xiàn)貨,原型號開票。 |
詢價 | ||
Infineon/英飛凌 |
23+ |
QFN8 |
69000 |
全新原裝現(xiàn)貨熱賣/代理品牌/可申請樣品和規(guī)格書 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
DFN-83.3X3.3 |
17093 |
原裝進口假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TDSON8 |
28650 |
主營品牌深圳百分百原裝現(xiàn)貨假一罰十絕對價優(yōu) |
詢價 | ||
Infineon |
20+ |
N/A |
3069 |
確保原裝現(xiàn)貨,實單價格支持! |
詢價 | ||
INFINEON/英飛凌 |
24+ |
PG-TSDSON-8 |
3245 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
TDSON8 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
INFINEON/英飛凌 |
24+ |
N/A |
5000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
INF |
24+ |
4830 |
詢價 |
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