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C2310

StandardSurfaceMountPackage

Vectron

Vectron International, Inc

C2310

TCXOEFCStandardStandardSurfaceMountPackageLowPhaseNoiseoptionLowProfile

Features EFCStandard StandardSurfaceMountPackage LowPhaseNoiseoption LowProfile TypicalApplications PCSBaseStations LandMobileRadio CellularTelephony RadiointheLocalLoop

Vectron

Vectron International, Inc

CDCVF2310

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TITexas Instruments

德州儀器美國德州儀器公司

CDCVF2310

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TITexas Instruments

德州儀器美國德州儀器公司

CDCVF2310

High-PerformanceClockBuffer

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

CDCVF2310-EP

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

CDCVF2310MPWEP

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

CDCVF2310MPWREP

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

CDCVF2310PW

High-PerformanceClockBuffer

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

CDCVF2310PW

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TITexas Instruments

德州儀器美國德州儀器公司

CDCVF2310PWR

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TITexas Instruments

德州儀器美國德州儀器公司

CDCVF2310PWR

High-PerformanceClockBuffer

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

CEH2310

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,6.2A,RDS(ON)=33m?@VGS=10V. RDS(ON)=38m?@VGS=4.5V. RDS(ON)=55m?@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,6.1A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=45mW@VGS=2.5V. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2310

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=60mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM2310PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4.8Ampere FEATURE ???????*Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicatio

CHENMKOchenmko

力勤股份有限公司

CJ2310

SOT-23Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJ2310

N-ChannelMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

詳細參數(shù)

  • 型號：

    BT-2310MB

  • 制造商：

    Polycase

  • 功能描述：

    Enclosure; Flanged; Flame Retardand ABS Plastic; 3.05 x 2.05 x 1.08 in; Black

供應(yīng)商型號品牌批號封裝庫存備注價格
Polycase
新
9
全新原裝 貨期兩周
 詢價
Polycase
2022+
5
全新原裝 貨期兩周
 詢價
BT
23+
SOP
12823
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
BT
22+
SOP28
27392
原裝正品現(xiàn)貨,可開13個點稅
 詢價
BT
23+
SOP28
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
BT
23+
SOP28
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
BT
23+
SOP28
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
PT
24+
SOP
28650
詢價
2017+
SOP28
6528
只做原裝正品假一賠十!
 詢價
BT
22+23+
SOP28
28552
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
更多BT-2310MB供應(yīng)商 更新時間2024-11-19 16:05:00

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