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CEB730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED730G

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 400V,5A,RDS(ON)=1W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU730G

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU730G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 400V,5A,RDS(ON)=1W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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更多BTS730CT供應(yīng)商 更新時間2025-1-20 16:12:00