Overview

The BTS 7960is part of the NovalithIC?family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature,

overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can be combined with other BTS 7960 to form H-bridge and 3-phase drive configurations.

Basic Features

? Path resistance of typ. 16 m?@25°C

? Low quiescent current of typ. 7μA @ 25°C

? PWM capability of up to 25 kHz combined with active freewheeling

? Switched mode current limitation for reduced power dissipation in overcurrent

? Current limitation level of 43 A typ.

? Status flag diagnosis with current sense capability

? Overtemperature shut down with latch behaviour

? Overvoltage lock out

? Undervoltage shut down

? Driver circuit with logic level inputs

? Adjustable slew rates for optimized EMI

BTS7960P屬于集成電路（IC） > 全半橋驅(qū)動(dòng)器。英飛凌科技股份公司制造生產(chǎn)的BTS7960P全半橋驅(qū)動(dòng)器器件屬于電橋驅(qū)動(dòng)器電源管理集成電路 (PMIC) 系列，包含兩個(gè)或多個(gè)功率晶體管，以及在外部器件控制下將其用作開關(guān)所需的電路。這些晶體管通常在內(nèi)部配置為成對(duì)串聯(lián)連接（稱為半橋），因而任意指定晶體管對(duì)之間的結(jié)點(diǎn)都可以連接至兩個(gè)電源軌中的任一個(gè)。這類器件常用于將控制器件（如微控制器）提供的低電平信號(hào)轉(zhuǎn)換為操作執(zhí)行器（如步進(jìn)電機(jī)或無刷電機(jī)）所需的較大功率信號(hào)。