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BU806

MEDIUMVOLTAGENPNFASTSWITCHINGDARLINGTONTRANSISTORS

DESCRIPTION ThedevicesaresiliconEpitaxialPlanarNPNpowertransistorsinDarlingtonconfigurationwithintegratedbase-emitterspeed-updiode,mountedinTO-220plasticpackage. Theycanbeusedinhorizontaloutputstagesof110oCRTvideodisplays. ■STMicroelectronicsPREFERREDSALESTYP

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BU806

8.0AMPEREDARLINGTONNPNPOWERTRANSISTORS60WATTS200VOLTS

ThisDarlingtontransistorisahighvoltage,highspeeddeviceforuseinhorizontaldeflectioncircuitsinTV’sandCRT’s. ?HighVoltage:VCEV=330or400V ?FastSwitchingSpeed: tc=1.0μs(max) ?LowSaturationVoltage: VCE(sat)=1.5V(max) ?PackagedinJEDECTO–220AB ?Da

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BU806

POWERTRANSISTORS(8.0A,150-200V,60W)

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

BU806

FASTSWITCHINGDARLINGTONTRANSISTOR

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

BU806

HighVoltage&FastSwitchingDarlingtonTransistor

HighVoltage&FastSwitchingDarlingtonTransistor ?UsingInHorizontalOutputStagesof110°CrtVideoDisplays ?BUILT-INSPEED-UPDiodeBetweenBaseandEmitter

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BU806

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?HighVoltage:VCEV=400V(Min) ?LowSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=5A APPLICATIONS ?DesignedforuseinhorizontaldeflectioncircuitsinTV’sand CRT’s.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BU806

MEDIUMVoltage&FastSwitchingDarlingtonTransistor

DESCRIPTION ThedevicesaresiliconEpitaxialPlanarNPNpowertransistorsinDarlingtonconfigurationwithintegratedbase-emitterspeed-updiode,mountedinTO-220plasticpackage. Theycanbeusedinhorizontaloutputstagesof110oCRTvideodisplays.

TGS

Tiger Electronic Co.,Ltd

BU806

NPNSILICONDARLINGTONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBU806andBU807typesareNPNSiliconDarlingtonTransistorsdesignedforhighvoltage,highcurrent,fastswitchingapplications.

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BU806

SiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?HighVoltage:VCEV=400V(Min) ?LowSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=5A APPLICATIONS ?DesignedforuseinhorizontaldeflectioncircuitsinTV’sand CRT’s.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BU806

NPNSILICONDARLINGTONTRANSISTORv

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

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1
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23+
10000
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2050
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23+
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7300
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PHILIPS
23+
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7300
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8513
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68900
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22+23+
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22991
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1950+
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4856
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PANJIT/強(qiáng)茂
21+
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8000
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更多BTY806P-FBP供應(yīng)商 更新時(shí)間2025-2-8 16:06:00

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