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BUL312FH

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideR.B.S.O.A. ■HIGHVOLTAGECAP

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL312FP

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUL312FPismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhigh switchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructurewithplanaredge terminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBULseriesisd

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL312FP

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=500V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.5V(Max)@IC=1A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUP312

IGBT

?Lowforwardvoltagedrop ?Highswitchingspeed ?Lowtailcurrent ?Latch-upfree ?Avalancherated

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BUZ312

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BUZ312

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

C312

MONOLITHICWIDEBANDCRTDISTORTIONCORRECTIONDEVICE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

C312

MOLOLITHICWIDEBANDCRTDISTORTIONCORRECTIONDEVICE

FEATURES ?16or24pinceramicdip ?Minimumofexternalcomponentsrequired ?Easilyadjustsforyokeerrors ?Accuracybetterthan0.5Max(C312) ?Bandwidthcompatiblewith10MHzsystems ?Bothgeometryandfocusavailable

INTRONICS

Intronics Power, Inc.

CAPA312

3.5EmbeddedSBCwithIntel?Pentium?ProcessorN4200&Celeron?Processor3.5EmbeddedSBCwithIntel?Pentium?ProcessorN4200&Celeron?Processor

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

CH312HA

2.54MM(.100)RIGHTANGLEBOARDMOUNTPNHEADER

CVILUXCvilux Corporation

瀚荃瀚荃股份有限公司

CL312

WhitetranslucenthighimpactUVstabilizedacryliclens

LUMINIS

Lumins Inc.

CM312

CommunicationsutilityModule

ETCList of Unclassifed Manufacturers

未分類制造商

CM312

S-11DoubleContactBayonetBase

S-11DoubleContactBayonetBase T-3/4WireTerminal T-3/4Micro-MidgetFlangeBase

CML

Chicago Miniature Lamp,inc

CM312

ContactBayonetBaseWireTerminal

S-11DoubleContactBayonetBase T-3/4WireTerminal T-3/4Micro-MidgetFlangeBase

VCC

Visual Communications Company

CMCP312

CMCP312Series12ChannelDINRailMountSwitchableBNCOutput

STi

STI Vibration Monitoring Inc.

CMCP312E

CMCP312EEconomyBNCSwitchBox

Features: ?LowCost ?IndoorUse ?12,24,36or48Channels ?LightGrayABS ?SwitchableBNCOutputs ?ScrewTerminals ?22-14AWG ?NEMArated1,2,4and4xandIEC529-IP66

STi

STI Vibration Monitoring Inc.

CMD312

4-28GHzFundamentalMixer

MMIC

Custom MMIC Design Services, Inc.

CMD312

4-28GHzFundamentalMixer

QORVO

Qorvo, Inc

CP312

PowerTransistorNPN-Amp/SwitchTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize70x70MILS DieThickness9.0MILS BaseBondingPadArea11.4x18.1MILS EmitterBondingPadArea13.8x23.6MILS TopSideMetalization

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CP312FRA

CommonModeChokesforCriticalApplications

CommonModeChokesforCriticalApplications ?Designedforhigh-speedUSB3.0,HDMI,SATA,IEEE1394andLVDSapplications. ?Supportsdataratesupto4.8Gbit/s. ?MiniatureEIA0603footprint;only1.17mmtall ?Mostvaluesprovide>15dBcommonmodeattenuationand>100ohmsi

COILCRAFTCoilcraft lnc.

線藝美國(guó)線藝公司

晶體管資料

  • 型號(hào):

    BU312

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    電視 (TV)_行輸出 (HA)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    280V

  • 最大電流允許值:

    6A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號(hào):

    BU104,BU109,BU606,BY607,BY608,3DK03F,

  • 最大耗散功率:

    25W

  • 放大倍數(shù):

  • 圖片代號(hào):

    E-44

  • vtest:

    280

  • htest:

    999900

  • atest:

    6

  • wtest:

    25

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更多BU312供應(yīng)商 更新時(shí)間2025-1-11 16:30:00